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参数资料
| 型号： | MPSA06 |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | 功率晶体管 |
| 英文描述： | Amplifier Transistors Voltage and Current are Negative for PNP Transistors(NPN通用放大器) |
| 中文描述： | 500 mA, 80 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 封装： | CASE 29-11, TO-226, 3 PIN |
| 文件页数： | 2/7页 |
| 文件大小： | 81K |
| 代理商： | MPSA06 |
(NPN) MPSA05, MPSA06*, (PNP) MPSA55, MPSA56*
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS
(T
A
= 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
CollectorEmitter Breakdown Voltage (Note 2)
(I
C
= 1.0 mAdc, I
B
= 0)
MPSA05, MPSA55
MPSA06, MPSA56
V
(BR)CEO
60
80
Vdc
EmitterBase Breakdown Voltage
(I
E
= 100 Adc, I
C
= 0)
V
(BR)EBO
4.0
Vdc
Collector Cutoff Current
(V
CE
= 60 Vdc, I
B
= 0)
I
CES
0.1
Adc
Collector Cutoff Current
(V
CB
= 60 Vdc, I
E
= 0)
(V
CB
= 80 Vdc, I
E
= 0)
MPSA05, MPSA55
MPSA06, MPSA56
I
CBO
0.1
0.1
Adc
ON CHARACTERISTICS
DC Current Gain
(I
C
= 10 mAdc, V
CE
= 1.0 Vdc)
(I
C
= 100 mAdc, V
CE
= 1.0 Vdc)
h
FE
100
100
CollectorEmitter Saturation Voltage
(I
C
= 100 mAdc, I
B
= 10 mAdc)
V
CE(sat)
0.25
Vdc
BaseEmitter On Voltage
(I
C
= 100 mAdc, V
CE
= 1.0 Vdc)
V
BE(on)
1.2
Vdc
SMALLSIGNAL CHARACTERISTICS
CurrentGain Bandwidth Product (Note 3)
(I
C
= 10 mA, V
CE
= 2.0 V, f = 100 MHz)
MPSA05
MPSA06
MPSA55
MPSA56
(I
C
= 100 mAdc, V
CE
= 1.0 Vdc, f = 100 MHz)
f
T
100
50
MHz
2. Pulse Test: Pulse Width
3. f
T
is defined as the frequency at which |h
fe
| extrapolates to unity.
300 s, Duty Cycle
2%.
Figure 1. Switching Time Test Circuits
OUTPUT
TURNON TIME
1.0 V
V
CC
+40 V
R
L
* C
S
6.0 pF
R
B
100
100
V
in
5.0 F
t
r
= 3.0 ns
0
+10 V
5.0 s
OUTPUT
TURNOFF TIME
+V
BB
V
CC
+40 V
R
L
* C
S
6.0 pF
R
B
100
100
V
in
5.0 F
t
r
= 3.0 ns
5.0 s
*Total Shunt Capacitance of Test Jig and Connectors For PNP Test Circuits, Reverse All Voltage Polarities
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MPS-A06 | 制造商:MICRO-ELECTRONICS 制造商全称:Micro Electronics 功能描述:COMPLEMENTRAY SILICON AF MEDIUM POWER TRANSISTORS |
| MPSA06 T/R | 功能描述:开关晶体管 - 偏压电阻器 TRANS GP TAPE RADIAL RoHS:否 制造商:ON Semiconductor 配置: 晶体管极性:NPN/PNP 典型输入电阻器: 典型电阻器比率: 安装风格:SMD/SMT 封装 / 箱体: 直流集电极/Base Gain hfe Min:200 mA 最大工作频率: 集电极—发射极最大电压 VCEO:50 V 集电极连续电流:150 mA 峰值直流集电极电流: 功率耗散:200 mW 最大工作温度: 封装:Reel |
| MPSA06,116 | 功能描述:两极晶体管 - BJT TRANS GP TAPE RADIAL RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| MPSA06,126 | 功能描述:两极晶体管 - BJT TRANS GP AMMO RADIAL RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| MPSA06,412 | 功能描述:两极晶体管 - BJT TRANS GP BULK STR LEAD RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
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