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参数资料
| 型号： | MPSA18 |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | 小信号晶体管 |
| 英文描述： | Low Noise Transistor NPN Silicon(NPN低噪声晶体管) |
| 中文描述： | 200 mA, 45 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 封装： | CASE 29-11, TO-226AA, 3 PIN |
| 文件页数： | 2/5页 |
| 文件大小： | 80K |
| 代理商： | MPSA18 |
MPSA18
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS
(T
A
= 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
CollectorEmitter Breakdown Voltage (Note 2)
(I
C
= 10 mAdc, I
B
= 0)
V
(BR)CEO
45
Vdc
CollectorBase Breakdown Voltage
(I
C
= 100 Adc, I
E
= 0)
V
(BR)CBO
45
Vdc
EmitterBase Breakdown Voltage
(I
E
= 10 Adc, I
C
= 0)
V
(BR)EBO
6.5
Vdc
Collector Cutoff Current
(V
CB
= 30 Vdc, I
E
= 0)
I
CBO
1.0
50
nAdc
ON CHARACTERISTICS
(Note 2)
DC Current Gain
(I
C
= 10 Adc, V
CE
= 5.0 Vdc)
(I
C
= 100 Adc, V
CE
= 5.0 Vdc)
(I
C
= 1.0 mAdc, V
CE
= 5.0 Vdc)
(I
C
= 10 mAdc, V
CE
= 5.0 Vdc)
h
FE
400
500
500
500
580
850
1100
1150
1500
CollectorEmitter Saturation Voltage
(I
C
= 10 mAdc, I
B
= 0.5 mAdc)
(I
C
= 50 mAdc, I
B
= 5.0 mAdc)
V
CE(sat)
0.08
0.2
0.3
Vdc
BaseEmitter On Voltage
(I
C
= 1.0 mAdc, V
CE
= 5.0 Vdc)
V
BE(on)
0.6
0.7
Vdc
SMALLSIGNAL CHARACTERISTICS
CurrentGain Bandwidth Product
(I
C
= 1.0 mAdc, V
CE
= 5.0 Vdc, f = 100 MHz)
f
T
100
160
MHz
CollectorBase Capacitance
(V
CB
= 5.0 Vdc, I
E
= 0, f = 1.0 MHz)
C
cb
1.7
3.0
pF
EmitterBase Capacitance
(V
EB
= 0.5 Vdc, I
C
= 0, f = 1.0 MHz)
C
eb
5.6
6.5
pF
Noise Figure
(I
C
= 100 Adc, V
CE
= 5.0 Vdc, R
S
= 10 k , f = 1.0 kHz)
(I
C
= 100 Adc, V
CE
= 5.0 Vdc, R
S
= 1.0 k , f = 100 Hz)
NF
0.5
4.0
1.5
dB
Equivalent Short Circuit Noise Voltage
(I
C
= 100 Adc, V
CE
= 5.0 Vdc, R
S
= 1.0 k , f = 100 Hz)
2. Pulse Test: Pulse Width
≤
300 s, Duty Cycle
≤
2.0%.
V
T
6.5
nV
Hz
R
S
i
n
e
n
IDEAL
TRANSISTOR
Figure 1. Transistor Noise Model
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MPSA18 LEADFREE | 制造商:Central Semiconductor Corp 功能描述: |
| MPSA18_01 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:NPN General Purpose Amplifier |
| MPSA18_D26Z | 功能描述:两极晶体管 - BJT NPN Transistor General Purpose RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| MPSA18_D26Z_Q | 功能描述:两极晶体管 - BJT NPN Transistor General Purpose RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| MPSA18_D27Z | 功能描述:两极晶体管 - BJT NPN Gen Purp Amp RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
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