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参数资料
| 型号： | MPSA43 |
| 厂商： | KEC Holdings |
| 英文描述： | EPITAXIAL PLANAR NPN TRANSISTOR (HIGH VOLTAGE, TELEPHONE ) |
| 中文描述： | 外延平面NPN晶体管（高电压，电话） |
| 文件页数： | 2/3页 |
| 文件大小： | 656K |
| 代理商： | MPSA43 |
ELECTRICAL CHARACTERISTICS
(TA = 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage(1)
(IC = 1.0 mAdc, IB = 0)
MPSA42
MPSA43
V(BR)CEO
300
200
—
—
Vdc
Collector–Base Breakdown Voltage
(IC = 100 Adc, IE = 0)
MPSA42
MPSA43
V(BR)CBO
300
200
—
—
Vdc
Emitter–Base Breakdown Voltage
(IE = 10 Adc, IC = 0)
V(BR)EBO
5.0
—
Vdc
Collector Cutoff Current
(VCB = 200 Vdc, IE = 0)
(VCB = 160 Vdc, IE = 0)
MPSA42
MPSA43
ICBO
—
—
0.25
0.1
μ
Adc
Emitter Cutoff Current
(VEB =
3.0
Vdc, IC = 0)
(VEB = 4.0 Vdc, IC = 0)
MPSA42
MPSA43
IEBO
—
—
0.25
0.1
μ
Adc
ON CHARACTERISTICS(1)
DC Current Gain
(IC = 1.0 mAdc, VCE = 10 Vdc)
(IC = 10 mAdc, VCE = 10 Vdc)
(IC =
50
mAdc, VCE = 10 Vdc)
Collector–Emitter Saturation Voltage
(IC = 20 mAdc, IB = 2.0 mAdc)
hFE
25
80
25
—
250
—
MPSA42
MPSA43
VCE(sat)
—
—
0.5
0.4
Vdc
Base–Emitter Saturation Voltage
(IC = 20 mAdc, IB = 2.0 mAdc)
SMALL–SIGNAL CHARACTERISTICS
VBE(sat)
—
0.9
Vdc
Current–Gain — Bandwidth Product
(IC =
10
mAdc, VCE =
5
Vdc, f =
30
MHz)
fT
50
—
MHz
Collector–Base Capacitance
(VCB = 20 Vdc, IE = 0, f = 1.0 MHz)
MPSA42
MPSA43
Ccb
—
—
3.0
4.0
pF
1. Pulse Test: Pulse Width
300 s, Duty Cycle
2.0%.
M C C
www.
mc c semi
.c om
MPSA42
thru
MPSA43
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MPS-A43 | 制造商:MICRO-ELECTRONICS 制造商全称:Micro Electronics 功能描述:NPN SILICON GENERAL PURPOSE HIGH VOLTAGE TRANSISTORS |
| MPSA43,116 | 功能描述:两极晶体管 - BJT TRANS GP TAPE RADIAL RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| MPSA43 | 制造商:Fairchild Semiconductor Corporation 功能描述:Bipolar Transistor |
| MPSA43_02 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:NPN High Voltage Amplifier |
| MPSA43_D26Z | 功能描述:两极晶体管 - BJT NPN Transistor High Voltage RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
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