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参数资料
| 型号： | MPSA56J05Z |
| 厂商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 500 mA, 80 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 封装： | TO-92, 3 PIN |
| 文件页数： | 1/15页 |
| 文件大小： | 1073K |
| 代理商： | MPSA56J05Z |
2006 Fairchild Semiconductor Corporation
1
www.fairchildsemi.com
February 2006
MPSA56/MMBTA56/PZTA56 Rev. 1.0.2
MPSA56/MMBT
A56/PZT
A56
PNP
General
Purpose
Amplier
MPSA56/MMBTA56/PZTA56
PNP General Purpose Amplier
Description
This device is designed for general purpose amplier
applications at collector currents to 300mA. Sourced
from Process 73
Absolute Maximum Ratings*
TA = 25°C unless otherwise specied.
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Notes:
1. These ratings are based on a maximum junction temperature of 150°C.
2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
3. All voltages (V) and currents (A) are negative polarity for PNP transistors.
Thermal Characteristics
TA = 25°C unless otherwise noted.
*Device mounted on FR-4 PCB 1.6" x 1.6" x 0.06."
**Device mounted on FR-4 PCB 36mm x 18mm x 1.5mm; mounting pad for the collector lead min. 6 cm2.
Packages
Parameter
Symbol
Value
Unit
Collector-Emitter Voltage
VCES
-80
V
Collector-Base Voltage
VCBO
-80
V
Emitter-Base Voltage
VEBO
-4.0
V
Collector Current – Continuous
IC
-500
mA
Operating and Storage Junction Temperature Range
TJ, TSTG
-55 to +150
°C
Characteristic
Symbol
Max
Units
MPSA56
*MMBTA56
**PZTA56
Total Device Dissipation,
Derate above 25°C
PD
625
5.0
350
2.8
1,000
8.0
mW
mW/°C
Thermal Resistance, Junction to Case
RθJC
83.3
°C/W
Thermal Resistance, Junction to Ambient
RθJA
200
357
125
°C/W
C
B
E
TO-92
MPSA56
MMBTA56
PZTA56
C
B
E
SOT-23
Mark: 2G
B
C
SOT-223
E
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MPSA56LRAG | 制造商:Fairchild Semiconductor Corporation 功能描述:BIPOLAR TRANSISTOR PNP -80V |
| MPSA56L-T92-B | 制造商:UTC-IC 制造商全称:UTC-IC 功能描述:PNP MPSA56 |
| MPSA56L-T92-K | 制造商:UTC-IC 制造商全称:UTC-IC 功能描述:PNP MPSA56 |
| MPSA56R6RAG | 制造商:ON Semiconductor 功能描述: |
| MPSA56RA | 功能描述:两极晶体管 - BJT PNP Transistor General Purpose RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
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