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参数资料
| 型号： | MMBTA70LT3 |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 100 mA, 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236AB |
| 封装： | PLASTIC, CASE 318-08, 3 PIN |
| 文件页数： | 1/25页 |
| 文件大小： | 486K |
| 代理商： | MMBTA70LT3 |
2–412
Motorola Small–Signal Transistors, FETs and Diodes Device Data
General Purpose Transistor
PNP Silicon
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector–Emitter Voltage
VCEO
–40
Vdc
Emitter–Base Voltage
VEBO
–4.0
Vdc
Collector Current — Continuous
IC
–100
mAdc
DEVICE MARKING
MMBTA70LT1 = M2C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Device Dissipation FR-5 Board,(1)
TA = 25°C
Derate above 25
°C
PD
225
1.8
mW
mW/
°C
Thermal Resistance, Junction to Ambient
R
θJA
556
°C/W
Total Device Dissipation
Alumina Substrate,(2) TA = 25°C
Derate above 25
°C
PD
300
2.4
mW
mW/
°C
Thermal Resistance, Junction to Ambient
R
θJA
417
°C/W
Junction and Storage Temperature
TJ, Tstg
– 55 to +150
°C
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(IC = –1.0 mAdc, IB = 0)
V(BR)CEO
–40
—
Vdc
Emitter–Base Breakdown Voltage
(IE = –100 Adc, IC = 0)
V(BR)EBO
–4.0
—
Vdc
Collector Cutoff Current
(VCB = –30 Vdc, IE = 0)
ICBO
—
–100
nAdc
ON CHARACTERISTICS
DC Current Gain
(IC = –5.0 mAdc, VCE = –10 Vdc)
hFE
40
400
—
Collector–Emitter Saturation Voltage
(IC = –10 mAdc, IB = –1.0 mAdc)
VCE(sat)
—
–0.25
Vdc
SMALL–SIGNAL CHARACTERISTICS
Current–Gain – Bandwidth Product
(IC = –5.0 mAdc, VCE = –10 Vdc, f = 100 MHz)
fT
125
—
MHz
Output Capacitance (VCB = –10 Vdc, IE = 0, f = 1.0 MHz)
Cobo
—
4.0
pF
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
MMBTA70LT1
1
2
3
CASE 318 – 08, STYLE 6
SOT– 23 (TO – 236AB)
COLLECTOR
3
1
BASE
2
EMITTER
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MMBTA92 | 功能描述:两极晶体管 - BJT SOT-23 PNP HIGH VOLT RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| MMBTA92 T/R | 功能描述:开关晶体管 - 偏压电阻器 TRANS SW TAPE-7 RoHS:否 制造商:ON Semiconductor 配置: 晶体管极性:NPN/PNP 典型输入电阻器: 典型电阻器比率: 安装风格:SMD/SMT 封装 / 箱体: 直流集电极/Base Gain hfe Min:200 mA 最大工作频率: 集电极—发射极最大电压 VCEO:50 V 集电极连续电流:150 mA 峰值直流集电极电流: 功率耗散:200 mW 最大工作温度: 封装:Reel |
| MMBTA92,215 | 功能描述:两极晶体管 - BJT TRANS SW TAPE-7 RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| MMBTA92 | 制造商:Fairchild Semiconductor Corporation 功能描述:TRANSISTOR PNP SOT-23 |
| MMBTA92 | 制造商:Fairchild Semiconductor Corporation 功能描述:TRANSISTORS RF BIPOLAR TRANSISTOR TYPE: |
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