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参数资料
| 型号： | MMBTA63LT3 |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 500 mA, 30 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236AB |
| 封装： | PLASTIC, CASE 318-08, 3 PIN |
| 文件页数： | 1/22页 |
| 文件大小： | 328K |
| 代理商： | MMBTA63LT3 |
2–410
Motorola Small–Signal Transistors, FETs and Diodes Device Data
Darlington Transistors
PNP Silicon
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector – Emitter Voltage
VCES
–30
Vdc
Collector – Base Voltage
VCBO
–30
Vdc
Emitter – Base Voltage
VEBO
–10
Vdc
Collector Current — Continuous
IC
–500
mAdc
DEVICE MARKING
MMBTA63LT1 = 2U; MMBTA64LT1 = 2V
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Device Dissipation FR–5 Board,(1)
TA = 25°C
Derate above 25
°C
PD
225
1.8
mW
mW/
°C
Thermal Resistance, Junction to Ambient
RqJA
556
°C/W
Total Device Dissipation
Alumina Substrate,(2) TA = 25°C
Derate above 25
°C
PD
300
2.4
mW
mW/
°C
Thermal Resistance, Junction to Ambient
RqJA
417
°C/W
Junction and Storage Temperature
TJ, Tstg
–55 to +150
°C
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage (IC = –100 Adc)
V(BR)CEO
–30
—
Vdc
Collector Cutoff Current (VCB = –30 Vdc)
ICBO
—
–100
nAdc
Emitter Cutoff Current (VEB = –10 Vdc)
IEBO
—
–100
nAdc
ON CHARACTERISTICS
DC Current Gain(3)
(IC = –10 mAdc, VCE = –5.0 Vdc)
MMBTA63
(IC = –10 mAdc, VCE = –5.0 Vdc)
MMBTA64
(IC = –100 mAdc, VCE = –5.0 Vdc)
MMBTA63
(IC = –100 mAdc, VCE = –5.0 Vdc)
MMBTA64
hFE
5,000
10,000
20,000
—
Collector – Emitter Saturation Voltage (IC = –100 mAdc, IB = –0.1 mAdc)
VCE(sat)
—
–1.5
Vdc
Base–Emitter On Voltage (IC = –100 mAdc, VCE = –5.0 Vdc)
VBE(on)
—
–2.0
Vdc
SMALL– SIGNAL CHARACTERISTICS
Current – Gain — Bandwidth Product (IC = –10 mAdc, VCE = –5.0 Vdc, f = 100 MHz)
fT
125
—
MHz
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
3. Pulse Test: Pulse Width
≤ 300 s, Duty Cycle ≤ 2.0%.
Preferred devices are Motorola recommended choices for future use and best overall value.
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
MMBTA63LT1
MMBTA64LT1
*Motorola Preferred Device
*
1
2
3
CASE 318 – 08, STYLE 6
SOT– 23 (TO – 236AB)
COLLECTOR 3
BASE
1
EMITTER 2
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MMBTA64 | 功能描述:达林顿晶体管 PNP Transistor Darlington RoHS:否 制造商:Texas Instruments 配置:Octal 晶体管极性:NPN 集电极—发射极最大电压 VCEO:50 V 发射极 - 基极电压 VEBO: 集电极—基极电压 VCBO: 最大直流电集电极电流:0.5 A 最大集电极截止电流: 功率耗散: 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-18 封装:Reel |
| MMBTA64_Q | 功能描述:达林顿晶体管 PNP Transistor Darlington RoHS:否 制造商:Texas Instruments 配置:Octal 晶体管极性:NPN 集电极—发射极最大电压 VCEO:50 V 发射极 - 基极电压 VEBO: 集电极—基极电压 VCBO: 最大直流电集电极电流:0.5 A 最大集电极截止电流: 功率耗散: 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-18 封装:Reel |
| MMBTA64-7 | 功能描述:达林顿晶体管 -30V 300mW RoHS:否 制造商:Texas Instruments 配置:Octal 晶体管极性:NPN 集电极—发射极最大电压 VCEO:50 V 发射极 - 基极电压 VEBO: 集电极—基极电压 VCBO: 最大直流电集电极电流:0.5 A 最大集电极截止电流: 功率耗散: 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-18 封装:Reel |
| MMBTA64-7-F | 功能描述:达林顿晶体管 -30V 300mW RoHS:否 制造商:Texas Instruments 配置:Octal 晶体管极性:NPN 集电极—发射极最大电压 VCEO:50 V 发射极 - 基极电压 VEBO: 集电极—基极电压 VCBO: 最大直流电集电极电流:0.5 A 最大集电极截止电流: 功率耗散: 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-18 封装:Reel |
| MMBTA64LT1 | 功能描述:达林顿晶体管 500mA 30V PNP RoHS:否 制造商:Texas Instruments 配置:Octal 晶体管极性:NPN 集电极—发射极最大电压 VCEO:50 V 发射极 - 基极电压 VEBO: 集电极—基极电压 VCBO: 最大直流电集电极电流:0.5 A 最大集电极截止电流: 功率耗散: 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-18 封装:Reel |
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