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| 型号： | MPSW42 |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | 小信号晶体管 |
| 英文描述： | One Watt High Voltage Transistor(NPN Silicon) |
| 中文描述： | 500 mA, 300 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-226 |
| 封装： | CASE 29-10, TO-92, 3 PIN |
| 文件页数： | 1/4页 |
| 文件大小： | 140K |
| 代理商： | MPSW42 |
1
Motorola Small–Signal Transistors, FETs and Diodes Device Data
Motorola, Inc. 1996
NPN Silicon
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector–Emitter Voltage
VCEO
VCBO
VEBO
IC
PD
300
Vdc
Collector–Base Voltage
300
Vdc
Emitter–Base Voltage
6.0
Vdc
Collector Current — Continuous
500
mAdc
Total Device Dissipation @ TA = 25
°
C
Derate above 25
°
C
1.0
8.0
Watt
mW/
°
C
Total Device Dissipation @ TC = 25
°
C
Derate above 25
°
C
PD
2.5
20
Watts
mW/
°
C
Operating and Storage Junction
Temperature Range
TJ, Tstg
–55 to +150
°
C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Ambient
RJA
RJC
125
°
C/W
Thermal Resistance, Junction to Case
50
°
C/W
ELECTRICAL CHARACTERISTICS
(TA = 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage(1)
(IC = 1.0 mAdc, IB = 0)
V(BR)CEO
300
—
Vdc
Collector–Base Breakdown Voltage
(IC = 100
μ
Adc, IE = 0)
V(BR)CBO
300
—
Vdc
Emitter–Base Breakdown Voltage
(IE = 100
μ
Adc, IC = 0)
V(BR)EBO
6.0
—
Vdc
Collector Cutoff Current
(VCB = 200 Vdc, IE = 0)
ICBO
—
0.1
μ
Adc
Emitter Cutoff Current
(VEB = 6.0 Vdc, IC = 0)
IEBO
—
0.1
μ
Adc
1. Pulse Test: Pulse Width
300 s, Duty Cycle
2.0%.
Preferred
devices are Motorola recommended choices for future use and best overall value.
Order this document
by MPSW42/D
SEMICONDUCTOR TECHNICAL DATA
CASE 29–05, STYLE 1
TO–92 (TO–226AE)
123
Motorola Preferred Device
COLLECTOR
3
2
BASE
1
EMITTER
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MPSW42_10 | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:One Watt High Voltage Transistor |
| MPSW42G | 功能描述:两极晶体管 - BJT 500mA 300V 1W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| MPSW42RLRA | 功能描述:两极晶体管 - BJT 500mA 300V 1W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| MPSW42RLRAG | 功能描述:两极晶体管 - BJT 500mA 300V 1W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| MPSW45 | 功能描述:达林顿晶体管 1A 40V NPN RoHS:否 制造商:Texas Instruments 配置:Octal 晶体管极性:NPN 集电极—发射极最大电压 VCEO:50 V 发射极 - 基极电压 VEBO: 集电极—基极电压 VCBO: 最大直流电集电极电流:0.5 A 最大集电极截止电流: 功率耗散: 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-18 封装:Reel |
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