参数资料
| 型号： | MR0A08BYS35 |
| 厂商： | Everspin Technologies Inc |
| 文件页数： | 1/23页 |
| 文件大小： | 0K |
| 描述： | IC MRAM 1MBIT 35NS 44TSOP |
| 标准包装： | 135 |
| 格式 - 存储器： | RAM |
| 存储器类型： | MRAM（磁阻 RAM） |
| 存储容量： | 1M (128K x 8) |
| 速度： | 35ns |
| 接口： | 并联 |
| 电源电压： | 3 V ~ 3.6 V |
| 工作温度： | 0°C ~ 70°C |
| 封装/外壳： | 44-TSOP（0.400"，10.16mm 宽） |
| 供应商设备封装： | 44-TSOP II |
| 包装： | 托盘 |
| 产品目录页面： | 1459 (CN2011-ZH PDF) |
| 其它名称： | 819-1002 |
MR0A08B
FEATURES
128K x 8 MRAM
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3.3 Volt power supply
Fast 35 ns read/write cycle
SRAM compatible timing
Native non-volatility
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Unlimited read & write endurance
Data always non-volatile for >20 years at temperature
Commercial and industrial temperatures
All products meet MSL-3 moisture sensitivity level
RoHS-Compliant TSOP2, BGA and SOIC packages
48-ball FBGA
BENEFITS
? One memory replaces FLASH, SRAM, EEPROM and
MRAM in system for simpler, more efficient design
? Improves reliability by replacing battery-backed
SRAM
INTRODUCTION
The MR0A08B is a 1,048,576-bit magnetoresistive random access
memory (MRAM) device organized as 131,072 words of 8 bits. The
MR0A08B offers SRAM compatible 35 ns read/write timing with unlim-
ited endurance.
44-pin TSOP2
32-pin SOIC
RoHS
Data is always non-volatile for greater than 20-years. Data is automatically protected on
power loss by low-voltage inhibit circuitry to prevent writes with voltage out of specification.
The MR0A08B is the ideal memory solution for applications that must permanently store and
retrieve critical data and programs quickly.
The MR0A08B is available in small footprint 400-mil, 44-lead plastic small-outline TSOP type-
2 package, 8 mm x 8 mm, 48-pin ball grid array (BGA) package with 0.75 mm ball centers, or
a 32-lead SOIC package. These packages are compatible with similar low-power SRAM prod-
ucts and other non-volatile RAM products.
The MR0A08B provides highly reliable data storage over a wide range of temperatures. The
product is offered with commercial temperature range (0 to +70 °C) and industrial tempera-
ture range (-40 to +85 °C).
Copyright ? 2013 Everspin Technologies
1
MR0A08B Rev. 8, 10/2013
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MR0A08BYS35R | 功能描述:NVRAM 1Mb 3.3V 128Kx8 35ns Parallel MRAM RoHS:否 制造商:Maxim Integrated 数据总线宽度:8 bit 存储容量:1024 Kbit 组织:128 K x 8 接口类型:Parallel 访问时间:70 ns 电源电压-最大:5.5 V 电源电压-最小:4.5 V 工作电流:85 mA 最大工作温度:+ 70 C 最小工作温度:0 C 封装 / 箱体:EDIP 封装:Tube |
| MR0A16A | 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:64K x 16-Bit 3.3-V Asynchronous Magnetoresistive RAM |
| MR0A16ACMA35 | 功能描述:NVRAM 1Mb 3.3V 64Kx16 35ns Parallel MRAM RoHS:否 制造商:Maxim Integrated 数据总线宽度:8 bit 存储容量:1024 Kbit 组织:128 K x 8 接口类型:Parallel 访问时间:70 ns 电源电压-最大:5.5 V 电源电压-最小:4.5 V 工作电流:85 mA 最大工作温度:+ 70 C 最小工作温度:0 C 封装 / 箱体:EDIP 封装:Tube |
| MR0A16ACMA35R | 功能描述:NVRAM 1Mb 3.3V 64Kx16 35ns Parallel MRAM RoHS:否 制造商:Maxim Integrated 数据总线宽度:8 bit 存储容量:1024 Kbit 组织:128 K x 8 接口类型:Parallel 访问时间:70 ns 电源电压-最大:5.5 V 电源电压-最小:4.5 V 工作电流:85 mA 最大工作温度:+ 70 C 最小工作温度:0 C 封装 / 箱体:EDIP 封装:Tube |
| MR0A16ACTS35C | 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:256K x 16-Bit 3.3-V Asynchronous Magnetoresistive RAM |
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