参数资料
| 型号： | MR0A08BYS35 |
| 厂商： | Everspin Technologies Inc |
| 文件页数： | 6/23页 |
| 文件大小： | 0K |
| 描述： | IC MRAM 1MBIT 35NS 44TSOP |
| 标准包装： | 135 |
| 格式 - 存储器： | RAM |
| 存储器类型： | MRAM（磁阻 RAM） |
| 存储容量： | 1M (128K x 8) |
| 速度： | 35ns |
| 接口： | 并联 |
| 电源电压： | 3 V ~ 3.6 V |
| 工作温度： | 0°C ~ 70°C |
| 封装/外壳： | 44-TSOP（0.400"，10.16mm 宽） |
| 供应商设备封装： | 44-TSOP II |
| 包装： | 托盘 |
| 产品目录页面： | 1459 (CN2011-ZH PDF) |
| 其它名称： | 819-1002 |
MR0A08B
ELECTRICAL SPECIFICATIONS
Absolute Maximum Ratings
This device contains circuitry to protect the inputs against damage caused by high static voltages or electric
fields; however, it is advised that normal precautions be taken to avoid application of any voltage greater
than maximum rated voltages to these high-impedance (Hi-Z) circuits.
The device also contains protection against external magnetic fields. Precautions should be taken o avoid
application of any magnetic field more intense than the maximum field intensity specified in the maximum
ratings. 1
Table 3 – Absolute Maximum Ratings
Parameter
Supply voltage 2,3
Voltage on any pin 2,3
Output current per pin
Package power dissipation 3
Symbol
V DD
V IN
I OUT
P D
Value
-0.5 to 4.0
-0.5 to V DD + 0.5
±20
0.600
Unit
V
V
mA
W
Temperature under bias
MR0A08B (Commercial)
MR0A08BC (Industrial)
Storage Temperature
Lead temperature during solder (3 minute max)
Maximum magnetic field during write
MR0A08B (All Temperatures)
Maximum magnetic field during read or standby
T BIAS
T stg
T Lead
H max_write
H max_read
-10 to 85
-45 to 95
-55 to 150
260
2000
8000
°C
°C
°C
A/m
A/m
Notes:
1. Permanent device damage may occur if absolute maximum ratings are exceeded. Functional opera-
tion should be restricted to recommended operating conditions. Exposure to excessive voltages or
magnetic fields could affect device reliability.
2. All voltages are referenced to V SS .
3. Power dissipation capability depends on package characteristics and use environment.
Copyright ? 2013 Everspin Technologies
6
MR0A08B Rev. 8, 10/2013
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相关代理商/技术参数 |
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| MR0A08BYS35R | 功能描述:NVRAM 1Mb 3.3V 128Kx8 35ns Parallel MRAM RoHS:否 制造商:Maxim Integrated 数据总线宽度:8 bit 存储容量:1024 Kbit 组织:128 K x 8 接口类型:Parallel 访问时间:70 ns 电源电压-最大:5.5 V 电源电压-最小:4.5 V 工作电流:85 mA 最大工作温度:+ 70 C 最小工作温度:0 C 封装 / 箱体:EDIP 封装:Tube |
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| MR0A16ACMA35 | 功能描述:NVRAM 1Mb 3.3V 64Kx16 35ns Parallel MRAM RoHS:否 制造商:Maxim Integrated 数据总线宽度:8 bit 存储容量:1024 Kbit 组织:128 K x 8 接口类型:Parallel 访问时间:70 ns 电源电压-最大:5.5 V 电源电压-最小:4.5 V 工作电流:85 mA 最大工作温度:+ 70 C 最小工作温度:0 C 封装 / 箱体:EDIP 封装:Tube |
| MR0A16ACMA35R | 功能描述:NVRAM 1Mb 3.3V 64Kx16 35ns Parallel MRAM RoHS:否 制造商:Maxim Integrated 数据总线宽度:8 bit 存储容量:1024 Kbit 组织:128 K x 8 接口类型:Parallel 访问时间:70 ns 电源电压-最大:5.5 V 电源电压-最小:4.5 V 工作电流:85 mA 最大工作温度:+ 70 C 最小工作温度:0 C 封装 / 箱体:EDIP 封装:Tube |
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