参数资料
| 型号： | MR0D08BMA45 |
| 厂商： | Everspin Technologies Inc |
| 文件页数： | 1/15页 |
| 文件大小： | 0K |
| 描述： | IC MRAM 1MBIT 45NS 48BGA |
| 标准包装： | 348 |
| 格式 - 存储器： | RAM |
| 存储器类型： | MRAM（磁阻 RAM） |
| 存储容量： | 1M (128K x 8) |
| 速度： | 45ns |
| 接口： | 并联 |
| 电源电压： | 3 V ~ 3.6 V |
| 工作温度： | 0°C ~ 70°C |
| 封装/外壳： | 48-LFBGA |
| 供应商设备封装： | 48-FBGA（8x8） |
| 包装： | 托盘 |
| 其它名称： | 819-1031 |
MR0D08B
FEATURES
? +3.3 Volt power supply
? I/O Voltage range supports wide +1.65 to +3.6 Volt interfaces
? Fast 45 ns read/write cycle
? SRAM compatible timing
? Unlimited read & write endurance
? Data always non-volatile for >20-years at temperature
? RoHS-compliant small footprint BGA package
BENEFITS
? One memory replaces FLASH, SRAM, EEPROM and BBSRAM in systems
for simpler, more efficient designs
Dual Supply 128K x 8 MRAM
RoHS
? Improves reliability by replacing battery-backed SRAM
INTRODUCTION
The MR0D08B is a dual power supply 1,048,576-bit magnetoresistive random access memory (MRAM) de-
vice organized as 131,072 words of 8 bits. It supports I/O voltages from +1.65 to +3.6 volts. The MR0D08B
offers SRAM compatible 45ns read/write timing with unlimited endurance. Data is always non-volatile for
greater than 20-years. Data is automatically protected on power loss by low-voltage inhibit circuitry to pre-
vent writes with voltage out of specification. The MR0D08B is the ideal memory solution for applications
that must permanently store and retrieve critical data and programs quickly.
The MR0D08B is available in small footprint 8 mm x 8 mm, 48-pin ball grid array (BGA) package with 0.75
mm ball centers.
The MR0D08B provides highly reliable data storage over a wide range of temperatures. The product is of-
fered with commercial temperature (0 to +70 °C).
CONTENTS
1. DEVICE PIN ASSIGNMENT......................................................................... 2
2. ELECTRICAL SPECIFICATIONS................................................................. 4
3. TIMING SPECIFICATIONS.......................................................................... 8
4. ORDERING INFORMATION....................................................................... 1 3
5. MECHANICAL DRAWING.......................................................................... 14
6. REVISION HISTORY...................................................................................... 15
How to Reach Us.......................................................................................... 15
Everspin Technologies ? 2011
1
MR0D08B Rev. 3, 12/2011
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MR0D08BMA45R | 功能描述:NVRAM 1Mb 3.3V 128Kx8 45ns Parallel MRAM RoHS:否 制造商:Maxim Integrated 数据总线宽度:8 bit 存储容量:1024 Kbit 组织:128 K x 8 接口类型:Parallel 访问时间:70 ns 电源电压-最大:5.5 V 电源电压-最小:4.5 V 工作电流:85 mA 最大工作温度:+ 70 C 最小工作温度:0 C 封装 / 箱体:EDIP 封装:Tube |
| MR0DL08BMA45 | 功能描述:IC MRAM 1MBIT 45NS 48FBGA 制造商:everspin technologies inc. 系列:- 包装:托盘 零件状态:有效 格式 - 存储器:RAM 存储器类型:MRAM（磁阻 RAM） 存储容量:1M（128K x 8） 速度:45ns 接口:并联 电压 - 电源:2.7 V ~ 3.6 V 工作温度:0°C ~ 70°C（TA） 封装/外壳:48-LFBGA 供应商器件封装:48-FBGA（8x8） 标准包装:349 |
| MR0DL08BMA45R | 功能描述:IC MRAM 1MBIT 45NS 48FBGA 制造商:everspin technologies inc. 系列:- 包装:剪切带（CT） 零件状态:有效 格式 - 存储器:RAM 存储器类型:MRAM（磁阻 RAM） 存储容量:1M（128K x 8） 速度:45ns 接口:并联 电压 - 电源:2.7 V ~ 3.6 V 工作温度:0°C ~ 70°C（TA） 封装/外壳:48-LFBGA 供应商器件封装:48-FBGA（8x8） 标准包装:1 |
| MR0S08ACTS35C | 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:256K x 16-Bit 3.3-V Asynchronous Magnetoresistive RAM |
| MR0S08ACYS35 | 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:256K x 16-Bit 3.3-V Asynchronous Magnetoresistive RAM |
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