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参数资料
| 型号： | MR2510G |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | 整流器 |
| 英文描述： | 25 A, 1000 V, SILICON, RECTIFIER DIODE |
| 封装： | PLASTIC, 2 PIN |
| 文件页数： | 3/7页 |
| 文件大小： | 125K |
| 代理商： | MR2510G |
MR2502, MR2504, MR2510
http://onsemi.com
373
Figure 1. Forward Voltage
Figure 2. NonRepetitive Surge Current
Figure 3. Forward Voltage Temperature
Coefficient
Figure 4. Current Derating
Figure 5. Forward Power Dissipation
1.8
2.4
0.6
vF, INSTANTANEOUS FORWARD VOLTAGE (VOLTS)
700
500
20
50
10
NUMBER OF CYCLES
100
1.0
300
100
80
60
iF, INSTANTANEOUS FORWARD CURRENT (AMP)
1.0
0.2
+0.5
0
0.5
1.0
1.5
2.0
130
140
125
TC, CASE TEMPERATURE (°C)
40
30
20
10
0
IF(AV), AVERAGE FORWARD CURRENT (AMP)
10
0
50
40
30
10
0
40
135
i F
,INST
ANT
ANEOUS
FOR
W
ARD
CURRENT
(AMP)
I
°
COEFFICIENT
(mV/
C)
5.0
2.0
1.0
1.2
0.8
1.0
1.4
1.6
2.0
2.2
2.0
5.0
10
20
50
200
400
600
10
20
100
200
,A
VERAGE
FOR
W
ARD
CURRENT
(AMP)
I F(A
V)
145
155
150
50
20
30
50
20
P
F(A
V)
,A
VERAGE
POWER
DISSIP
A
TION
(W
A
TTS)
2.6
7.0
100
70
0.2
0.5
0.7
200
30
3.0
0.3
300
,PEAK
HALF
W
A
VE
CURRENT
(AMP)
FSM
0.5
5.0
50
160
165
175
170
MAXIMUM
TYPICAL
TJ = 25°C
TYPICAL RANGE
f = 60 Hz
TJ = 175°C
25
°C
SINE WAVE
CAPACITIVE
LOADS
I
(FM)
I
(AV)
+ 20
Capacitive
Loads
5.0
10
20
dc
I
(FM)
I
(AV)
+ p (SineWaveResistiveLoad)
SINE WAVE
RESISTIVE LOAD
SQUARE
WAVE
dc
5.0
10
1 CYCLE
VRRM MAY BE APPLIED BETWEEN
EACH CYCLE OF SURGE. THE TJ
NOTED IS TJ PRIOR TO SURGE
相关PDF资料 |
PDF描述 |
|---|---|
| MR3025G | 25 A, 250 V, SILICON, RECTIFIER DIODE |
| MR850-G | 3 A, 50 V, SILICON, RECTIFIER DIODE, DO-201AD |
| MR851-G | 3 A, 100 V, SILICON, RECTIFIER DIODE, DO-201AD |
| MR852-G | 3 A, 200 V, SILICON, RECTIFIER DIODE, DO-201AD |
| MR856-G | 3 A, 600 V, SILICON, RECTIFIER DIODE, DO-201AD |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MR2510L | 制造商:EIC 制造商全称:EIC discrete Semiconductors 功能描述:AUTOMOTIVE RECTIFIER DIODES |
| MR2512 | 制造商:EIC 制造商全称:EIC discrete Semiconductors 功能描述:AUTOMOTIVE RECTIFIER DIODES |
| MR2512L | 制造商:EIC 制造商全称:EIC discrete Semiconductors 功能描述:AUTOMOTIVE RECTIFIER DIODES |
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