参数资料
| 型号： | MR25H10MDCR |
| 厂商： | Everspin Technologies Inc |
| 文件页数： | 19/20页 |
| 文件大小： | 0K |
| 描述： | IC MRAM 1MBIT 40MHZ 8DFN |
| 标准包装： | 2,000 |
| 格式 - 存储器： | RAM |
| 存储器类型： | MRAM（磁阻 RAM） |
| 存储容量： | 1M (128K x 8) |
| 速度： | 40MHz |
| 接口： | SPI 串行 |
| 电源电压： | 2.7 V ~ 3.6 V |
| 工作温度： | -40°C ~ 125°C |
| 封装/外壳： | 8-TDFN 裸露焊盘 |
| 供应商设备封装： | 8-DFN-EP，大型标志（5x6） |
| 包装： | 带卷 (TR) |
MR25H10
7. REVISION HISTORY
Revision
0
1
2
3
4
5
6
7
8
9
Date
Sep 12, 2008
Jul 10, 2009
Jul 16, 2009
Jan 5, 2010
Feb 5, 2010
May 17, 2010
Sep 14, 2011
November 18,
2011
October 19,
2012
April 17, 2013
Description of Change
Initial Advance Information Release
Change ac load resistance, tPU to 400 us, tRDP to 400 us, Change # of Address Bytes in Table
2 to 3, New Package Drawing, Make Preliminary
Increase Absolute Max Magnetic Field during write, read, and standby to 12,000 A/m
Described block protect in detail with power sequencing.
Added section system configuration.
Removed commercial specifications. All parts meet industrial specifications.
Corrected various typos. Clarified block and status register protection description. Revised Table 3.4 Power Supply
specifications. Added AEC-Q100 Grade 1 ordering option. Revised Table 3.1, Table 3.2, Table 4.4 revised and Note 2
deleted, revised Figure 5.1 and Table 5.1.
Corrected V OL in Table 3.3 to read V OL Max = V SS + 0.2v. Operating Conditions Power Supply Voltage for AEC-Q100
Grade1revised to 3.0-3.6v. Table 4.4: Output Valid t V specifications revised to include V DD ranges for Industrial and
AEC-Q100 Grade 1 options. Corrected SI waveform in Figure 2.8. Output Valid, t v for AEC-Q100 Grade revised from
9ns max to 10ns max in Table 4.4. New Small Flag DFN package option added to Page 1 Features and available
parts Table 5.1. DFN Small Flag drawing and dimensions table added as Figure 6.2. Figure 6.1, DFN Package,
cleaned up with better quality drawing and dimension table. No specifications were changed in Figure 6.1.
Reformatted tables for Section 3 Electrical Characteristics and timing parameters, Table 4.4. Revised Ordering Part
Numbers Table 5.1. Removed MDF and MDFR options. MDC and MDCR options are now qualified. Added Small
Flag DFN illustrations. Revised 8-DFN package drawing to show correct proportion for flag and package. Cor-
rected errors in DFN package outline drawings. Corrected V DD range for AEC-Q100 t V specification.
Added Automotive Grade AEC-Q100 Grade 1 for Small Flag DFN package.
Copyright ? Everspin Technologies 2013
19
MR25H10 Rev. 9, 4/2013
相关PDF资料 |
PDF描述 |
|---|---|
| 395-020-541-804 | CARD EDGE 20POS DL .100X.200 BLK |
| 395-020-541-802 | CARD EDGE 20POS DL .100X.200 BLK |
| AYF531635 | CONN SOCKET FPC 0.5MM 16POS SMD |
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| 395-020-540-802 | CARD EDGE 20POS DL .100X.200 BLK |
相关代理商/技术参数 |
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| MR25H10MDF | 功能描述:NVRAM 1Mb 3.3V 128Kx8 SPI Pre-Qual Sample MRAM RoHS:否 制造商:Maxim Integrated 数据总线宽度:8 bit 存储容量:1024 Kbit 组织:128 K x 8 接口类型:Parallel 访问时间:70 ns 电源电压-最大:5.5 V 电源电压-最小:4.5 V 工作电流:85 mA 最大工作温度:+ 70 C 最小工作温度:0 C 封装 / 箱体:EDIP 封装:Tube |
| MR25H10MDFR | 功能描述:NVRAM 1Mb 3.3V 128Kx8 SPI Pre-Qual Sample MRAM RoHS:否 制造商:Maxim Integrated 数据总线宽度:8 bit 存储容量:1024 Kbit 组织:128 K x 8 接口类型:Parallel 访问时间:70 ns 电源电压-最大:5.5 V 电源电压-最小:4.5 V 工作电流:85 mA 最大工作温度:+ 70 C 最小工作温度:0 C 封装 / 箱体:EDIP 封装:Tube |
| MR25H256CDC | 功能描述:NVRAM 256Kb 3V 32Kx8 Serial MRAM RoHS:否 制造商:Maxim Integrated 数据总线宽度:8 bit 存储容量:1024 Kbit 组织:128 K x 8 接口类型:Parallel 访问时间:70 ns 电源电压-最大:5.5 V 电源电压-最小:4.5 V 工作电流:85 mA 最大工作温度:+ 70 C 最小工作温度:0 C 封装 / 箱体:EDIP 封装:Tube |
| MR25H256CDCR | 功能描述:NVRAM 256Kb 3V 32Kx8 Serial MRAM RoHS:否 制造商:Maxim Integrated 数据总线宽度:8 bit 存储容量:1024 Kbit 组织:128 K x 8 接口类型:Parallel 访问时间:70 ns 电源电压-最大:5.5 V 电源电压-最小:4.5 V 工作电流:85 mA 最大工作温度:+ 70 C 最小工作温度:0 C 封装 / 箱体:EDIP 封装:Tube |
| MR25H256CDF | 功能描述:NVRAM 256Kb 3.3V 32Kx8 Serial MRAM RoHS:否 制造商:Maxim Integrated 数据总线宽度:8 bit 存储容量:1024 Kbit 组织:128 K x 8 接口类型:Parallel 访问时间:70 ns 电源电压-最大:5.5 V 电源电压-最小:4.5 V 工作电流:85 mA 最大工作温度:+ 70 C 最小工作温度:0 C 封装 / 箱体:EDIP 封装:Tube |
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