参数资料
| 型号： | MR25H10MDCR |
| 厂商： | Everspin Technologies Inc |
| 文件页数： | 7/20页 |
| 文件大小： | 0K |
| 描述： | IC MRAM 1MBIT 40MHZ 8DFN |
| 标准包装： | 2,000 |
| 格式 - 存储器： | RAM |
| 存储器类型： | MRAM（磁阻 RAM） |
| 存储容量： | 1M (128K x 8) |
| 速度： | 40MHz |
| 接口： | SPI 串行 |
| 电源电压： | 2.7 V ~ 3.6 V |
| 工作温度： | -40°C ~ 125°C |
| 封装/外壳： | 8-TDFN 裸露焊盘 |
| 供应商设备封装： | 8-DFN-EP，大型标志（5x6） |
| 包装： | 带卷 (TR) |
MR25H10
SPI COMMUNICATIONS PROTOCOL
The WRSR command is entered by driving CS low, sending the command code and status register write
data byte, and then driving CS high.The WRSR command is entered by driving CS low, sending the com-
mand code and status register write data byte, and then driving CS high.
Figure 2.4 WRSR
CS
0
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15 Mode 3
SCK
Instruction (01h)
Status Register In
Mode 0
SI
0
0
0
0
0
0
0
1
7
6
5
4
3
2
1
0
MSB
SO
High Impedance
Read Data Bytes (READ)
The Read Data Bytes (READ) command allows data bytes to be read starting at an address specified by the
24-bit address. Only address bits 0-16 are decoded by the memory. The data bytes are read out sequen-
tially from memory until the read operation is terminated by bringing CS high The entire memory can be
read in a single command. The address counter will roll over to 0000h when the address reaches the top of
memory.
The READ command is entered by driving CS low and sending the command code. The memory drives the
read data bytes on the SO pin. Reads continue as long as the memory is clocked. The command is termi-
nated by bring CS high.
Figure 2.5 READ
CS
0
1
2
3
4
5
6
7
8
9
10
28
29
30
31
32
33
34
35
36
37
38
39
SCK
Instruction (03h)
24-Bit Address
SI
0
0
0
0
0
0
1
1
X
X
X
3
2
1
0
SO
MSB
High Impedance
7
6
5
Data Out 1
4 3
2
1
0
7
Data Out 2
MSB
Copyright ? Everspin Technologies 2013
7
MR25H10 Rev. 9, 4/2013
相关PDF资料 |
PDF描述 |
|---|---|
| 395-020-541-804 | CARD EDGE 20POS DL .100X.200 BLK |
| 395-020-541-802 | CARD EDGE 20POS DL .100X.200 BLK |
| AYF531635 | CONN SOCKET FPC 0.5MM 16POS SMD |
| 395-020-540-804 | CARD EDGE 20POS DL .100X.200 BLK |
| 395-020-540-802 | CARD EDGE 20POS DL .100X.200 BLK |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MR25H10MDF | 功能描述:NVRAM 1Mb 3.3V 128Kx8 SPI Pre-Qual Sample MRAM RoHS:否 制造商:Maxim Integrated 数据总线宽度:8 bit 存储容量:1024 Kbit 组织:128 K x 8 接口类型:Parallel 访问时间:70 ns 电源电压-最大:5.5 V 电源电压-最小:4.5 V 工作电流:85 mA 最大工作温度:+ 70 C 最小工作温度:0 C 封装 / 箱体:EDIP 封装:Tube |
| MR25H10MDFR | 功能描述:NVRAM 1Mb 3.3V 128Kx8 SPI Pre-Qual Sample MRAM RoHS:否 制造商:Maxim Integrated 数据总线宽度:8 bit 存储容量:1024 Kbit 组织:128 K x 8 接口类型:Parallel 访问时间:70 ns 电源电压-最大:5.5 V 电源电压-最小:4.5 V 工作电流:85 mA 最大工作温度:+ 70 C 最小工作温度:0 C 封装 / 箱体:EDIP 封装:Tube |
| MR25H256CDC | 功能描述:NVRAM 256Kb 3V 32Kx8 Serial MRAM RoHS:否 制造商:Maxim Integrated 数据总线宽度:8 bit 存储容量:1024 Kbit 组织:128 K x 8 接口类型:Parallel 访问时间:70 ns 电源电压-最大:5.5 V 电源电压-最小:4.5 V 工作电流:85 mA 最大工作温度:+ 70 C 最小工作温度:0 C 封装 / 箱体:EDIP 封装:Tube |
| MR25H256CDCR | 功能描述:NVRAM 256Kb 3V 32Kx8 Serial MRAM RoHS:否 制造商:Maxim Integrated 数据总线宽度:8 bit 存储容量:1024 Kbit 组织:128 K x 8 接口类型:Parallel 访问时间:70 ns 电源电压-最大:5.5 V 电源电压-最小:4.5 V 工作电流:85 mA 最大工作温度:+ 70 C 最小工作温度:0 C 封装 / 箱体:EDIP 封装:Tube |
| MR25H256CDF | 功能描述:NVRAM 256Kb 3.3V 32Kx8 Serial MRAM RoHS:否 制造商:Maxim Integrated 数据总线宽度:8 bit 存储容量:1024 Kbit 组织:128 K x 8 接口类型:Parallel 访问时间:70 ns 电源电压-最大:5.5 V 电源电压-最小:4.5 V 工作电流:85 mA 最大工作温度:+ 70 C 最小工作温度:0 C 封装 / 箱体:EDIP 封装:Tube |
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