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参数资料
| 型号： | MR760 |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | 整流器 |
| 英文描述： | 6 A, 1000 V, SILICON, RECTIFIER DIODE |
| 封装： | PLASTIC, CASE 194-04, 2 PIN |
| 文件页数： | 2/7页 |
| 文件大小： | 96K |
| 代理商： | MR760 |
MR750 SERIES
http://onsemi.com
2
MAXIMUM RATINGS
Characteristic
Symbol
MR750
MR751
MR752
MR754
MR756
MR760
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
50
100
200
400
600
1000
V
NonRepetitive Peak Reverse Voltage
(Halfwave, single phase, 60 Hz peak)
VRSM
60
120
240
480
720
1200
V
RMS Reverse Voltage
VR(RMS)
35
70
140
280
420
700
V
Average Rectified Forward Current
(Single phase, resistive load, 60 Hz)
IO
22 (TL = 60°C, 1/8 in Lead Lengths)
6.0 (TA = 60°C, P.C. Board mounting)
A
NonRepetitive Peak Surge Current
(Surge applied at rated load conditions)
IFSM
400 (for 1 cycle)
A
Operating and Storage Junction
Temperature Range
TJ, Tstg
*65 to +175
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
ELECTRICAL CHARACTERISTICS
Characteristic and Conditions
Symbol
Max
Unit
Maximum Instantaneous Forward Voltage Drop (iF = 100 A, TJ = 25°C)
vF
1.25
V
Maximum Forward Voltage Drop (IF = 6.0 A, TA = 25°C, 3/8 in leads)
VF
0.90
V
Maximum Reverse Current
TJ = 25°C
(Rated DC Voltage)
TJ = 100°C
IR
25
1.0
mA
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MR760G | 制造商:ON Semiconductor 功能描述:DIODE 6A 1000V |
| MR760RL | 功能描述:DIODE STD REC 6A 1000V AXIAL RoHS:否 类别:分离式半导体产品 >> 单二极管/整流器 系列:- 标准包装:100 系列:- 二极管类型:标准 电压 - (Vr)（最大）:50V 电流 - 平均整流 (Io):6A 电压 - 在 If 时为正向 (Vf)（最大）:1.4V @ 6A 速度:快速恢复 = 200mA（Io） 反向恢复时间(trr):300ns 电流 - 在 Vr 时反向漏电:15µA @ 50V 电容@ Vr, F:- 安装类型:底座，接线柱安装 封装/外壳:DO-203AA，DO-4，接线柱 供应商设备封装:DO-203AA 包装:散装 其它名称:*1N3879 |
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| MR-776 | 制造商:Commscope Inc 功能描述: |
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