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参数资料
| 型号： | MR760 |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | 整流器 |
| 英文描述： | 6 A, 1000 V, SILICON, RECTIFIER DIODE |
| 封装： | PLASTIC, CASE 194-04, 2 PIN |
| 文件页数： | 3/7页 |
| 文件大小： | 96K |
| 代理商： | MR760 |
MR750 SERIES
http://onsemi.com
3
Figure 1. Forward Voltage
Figure 2. Maximum Surge Capability
Figure 3. Forward Voltage Temperature Coefficient
Figure 4. Typical Transient Thermal Resistance
1.8
2.4
0.6
vF, INSTANTANEOUS FORWARD VOLTAGE (VOLTS)
700
500
20
50
10
i F
,INST
ANT
ANEOUS
FOR
W
ARD
CURRENT
(AMP)
5.0
2.0
1.0
1.2
0.8
1.0
1.4
1.6
2.0
2.2
2.6
7.0
100
70
0.2
0.5
0.7
200
30
3.0
0.3
300
MAXIMUM
TYPICAL
TJ = 25°C
NUMBER OF CYCLES AT 60 Hz
100
1.0
300
100
80
60
I
2.0
5.0
10
20
50
200
400
600
,PEAK
HALF
W
A
VE
CURRENT
(AMP)
FSM
TJ = 175°C
25
°C
VRRM MAY BE APPLIED BETWEEN
EACH CYCLE OF SURGE. THE TJ
NOTED IS TJ PRIOR TO SURGE
iF, INSTANTANEOUS FORWARD CURRENT (AMP)
1.0
0.2
+0.5
0
0.5
1.0
1.5
2.0
°
COEFFICIENT
(mV/
C)
10
20
100
200
0.5
5.0
50
TYPICAL RANGE
t, TIME (SECONDS)
1.0
10
1.0
0.2
2.0
5.0
10
20
50
5.0
20
R
3.0
2.0
0.5
0.3
0.1
0.2
0.3
0.5
0.7
3.0
30
7.0
70
Both leads to heat sink, with lengths as shown. Variations in RqJL(t)
below 2.0 seconds are independent of lead connections of 1/8 inch
or greater, and vary only about
±20% from the values shown. Val-
ues for times greater than 2.0 seconds may be obtained by drawing
a curve, with the end point (at 70 seconds) taken from Figure 8, or
calculated from the notes, using the given curves as a guide. Either
typical or maximum values may be used. For RqJL(t) values at pulse
widths less than 0.1 second, the above curve can be extrapolated
down to 10
ms at a continuing slope.
THERMAL
RESIST
ANCE
(
C/W)
175
°C
25
°C
1/2"
3/8"
1/4"
1/8"
,JUNCTIONT
OLEAD
TRANSIENT
JL(t)θ
°
HEAT SINK
L
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MR760G | 制造商:ON Semiconductor 功能描述:DIODE 6A 1000V |
| MR760RL | 功能描述:DIODE STD REC 6A 1000V AXIAL RoHS:否 类别:分离式半导体产品 >> 单二极管/整流器 系列:- 标准包装:100 系列:- 二极管类型:标准 电压 - (Vr)（最大）:50V 电流 - 平均整流 (Io):6A 电压 - 在 If 时为正向 (Vf)（最大）:1.4V @ 6A 速度:快速恢复 = 200mA（Io） 反向恢复时间(trr):300ns 电流 - 在 Vr 时反向漏电:15µA @ 50V 电容@ Vr, F:- 安装类型:底座，接线柱安装 封装/外壳:DO-203AA，DO-4，接线柱 供应商设备封装:DO-203AA 包装:散装 其它名称:*1N3879 |
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