参数资料
型号: MRF1015MA
厂商: MOTOROLA INC
元件分类: 功率晶体管
英文描述: MICROWAVE POWER TRANSISTORS
中文描述: L BAND, Si, NPN, RF POWER TRANSISTOR
文件页数: 2/4页
文件大小: 110K
代理商: MRF1015MA
MRF1015MA MRF1015MB
2
MOTOROLA RF DEVICE DATA
ELECTRICAL CHARACTERISTICS — continued
(TC = 25
°
C unless otherwise noted.)
Characteristic
Symbol
Min
Typ
Max
Unit
DYNAMIC CHARACTERISTICS
Output Capacitance
(VCB = 50 Vdc, IE = 0, f = 1.0 MHz)
Cob
5.0
7.5
pF
FUNCTIONAL TESTS
(Pulse Width = 10
μ
s, Duty Cycle = 1.0%)
Common–Base Amplifier Power Gain
(VCC = 50 Vdc, Pout = 15 W Peak, f = 1090 MHz)
GPB
10
12.5
dB
Collector Efficiency
(VCC = 50 Vdc, Pout = 15 W Peak, f = 1090 MHz)
η
30
35
%
Load Mismatch
(VCC = 50 Vdc, Pout = 15 W Peak, f = 1090 MHz,
VSWR = 10:1 All Phase Angles)
ψ
No Degradation in Power Output
Figure 1. 1090 MHz Test Circuit
C1, C2 — 220 pF 100 mil Chip Capacitor
C3 — 0.1
μ
F
C4 — 47
μ
F/75 V Electrolytic Capacitor
L1, L2 — 3 Turns #18 AWG, 1/8
ID
Z1–Z8 — Microstrip, See Photomaster
Board Material — 0.032
Glass Teflon
Board Material —
ε
r = 2.5
RF
INPUT
RF
OUTPUT
+
50 Vdc
DUT
Z1
L2
Z2
C2
+
C3
C4
L1
Z3
Z4
Z5
Z6
Z7
C1
Z8
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