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参数资料
| 型号： | MRF1047T1 |
| 厂商： | FREESCALE SEMICONDUCTOR INC |
| 元件分类： | 小信号晶体管 |
| 英文描述： | UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封装： | PLASTIC, CASE 419-02, SC-70, 3 PIN |
| 文件页数： | 1/12页 |
| 文件大小： | 221K |
| 代理商： | MRF1047T1 |
Device
Package
MRF1047T1
SEMICONDUCTOR
TECHNICAL DATA
RF NPN
SILICON TRANSISTOR
fτ = 12 GHz
NFmin = 1.0 dB
ICMAX = 45 mA
VCEO = 5.0 V
ORDERING INFORMATION
MRF1047T1
SC–70
Tape & Reel*
PLASTIC PACKAGE
CASE 419
(SC–70, Tape & Reel Only)
3
1
Order this document by MRF1047T1/D
Pin 1. Base
2. Emitter
3. Collector
Marking
WB
*3,000 Units per 8 mm, 7 inch reel.
2
1
MOTOROLA RF PRODUCTS DEVICE DATA
NPN Silicon
Low Noise Transistor
The MRF1047T1 is fabricated utilizing Motorola’s latest 12 GHz fτ discrete
bipolar silicon process. The minimum noise figure is 1.0 dB at VCE = 3.0 V and
IC = 3.0 mA. The noise performance of the MRF1047T1 at low bias makes
this device the ideal choice in high gain, low noise applications. This device
is well suited for low–voltage, low–current, front–end applications, for use in
pagers, cellular and cordless phones, and other portable wireless systems.
The MRF1047T1 has 16 emitter fingers, with self–aligned and enhanced
processing, resulting in a high fτ, low operating current transistor with
reduced parasitics. The MRF1047T1 is fully–ion implanted with gold
metallization and nitride passivation for maximum device r
eliability, performance and uniformity.
Low Noise Figure, NF
min = 1.0 dB (Typ) @1.0 GHz, 3.0 V and 3.0 mA
High Current Gain–Bandwidth Product, fτ = 12 GHz, 3.0 V @ 15 mA
Maximum Stable Gain, 17 dB @ 1.0 GHz, 3.0 V and 10 mA
Output Third Order Intercept, OIP
3 = 26 dBm @ 1.0 GHz 3.0 V
and 15 mA
Fully Ion–Implanted with Gold Metallization and Nitride Passivation
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector–Emitter Voltage
VCEO
5.0
Vdc
Collector–Base Voltage
VCBO
12
Vdc
Emitter–Base Voltage
VEBO
2.5
Vdc
Collector Current – Continuous [Note 3]
IC
45
mAdc
Power Dissipation @ TC = 75°C
PD(max)
0.172
W
Derate Linearly above TC = 75°C at
2.3
mW/
°C
Storage Temperature Range
Tstg
–55 to 150
°C
Maximum Junction Temperature
TJ(max)
150
°C
NOTES: 1. Meets Human Body Model (HBM)
≤300 V and Machine Model (MM) ≤75 V.
2. ESD data available upon request.
3. For MTBF >10 years.
THERMAL CHARACTERISTIC
Characteristics
Symbol
Max
Unit
Thermal Resistance, Junction–to–Case
RθJC
435
°C/W
NOTE:
To calculate the junction temperature use TJ = (PD x RθJC) + TC. The case
temperature measured on collector lead adjacent to the package body.
LIFETIME
BUY
LAST
ORDER:
03AUG01
LAST
SHIP:
26MAR02
Motorola, Inc. 2001
Rev 3
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Freescale Semiconductor, Inc.
For More Information On This Product,
Go to: www.freescale.com
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