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参数资料
| 型号： | MRF1507T1 |
| 元件分类： | 功率晶体管 |
| 英文描述： | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封装： | POWER, PLASTIC, CASE 466-02, 4 PIN |
| 文件页数： | 1/12页 |
| 文件大小： | 173K |
| 代理商： | MRF1507T1 |
LIFETIME
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LAST
ORDER
30JUN02
LAST
SHIP
30DEC0
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1
MRF1507
MOTOROLA RF DEVICE DATA
The RF MOSFET Line
RF Power Field Effect Transistor
N–Channel Enhancement–Mode Lateral MOSFETs
The MRF1507 is designed for broadband commercial and industrial
applications at frequencies to 520 MHz. The high gain and broadband
performance of this device makes it ideal for large–signal, common source
amplifier applications in 7.5 volt portable FM equipment.
Specified Performance @ 520 MHz, 7.5 Volts
Output Power — 8 Watts
Power Gain — 10 dB
Efficiency — 65%
Characterized with Series Equivalent Large–Signal
Impedance Parameters
Excellent Thermal Stability
Capable of Handling 20:1 VSWR, @ 9.5 Vdc,
520 MHz, 2 dB Overdrive
Broadband UHF/VHF Demonstration Amplifier
Information Available Upon Request
RF Power Plastic Surface Mount Package
Available in Tape and Reel by Adding T1 Suffix to
Part Number. T1 Suffix = 1,000 Units per 12 mm, 7 Inch Reel.
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Drain–Source Voltage (1)
VDSS
25
Vdc
Gate–Source Voltage
VGS
±20
Vdc
Drain Current — Continuous
ID
4
Adc
Total Device Dissipation @ TC = 25°C
Derate above 25
°C
PD
62.5
0.50
Watts
W/
°C
Storage Temperature Range
Tstg
– 65 to +150
°C
Operating Junction Temperature
Tj
150
°C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
R
θJC
2
°C/W
(1) Not designed for 12.5 volt applications.
NOTE – CAUTION – MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
Order this document
by MRF1507/D
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
MRF1507
(Cancelled)
MRF1507T1
8 W, 520 MHz, 7.5 V
LATERAL N–CHANNEL
BROADBAND
RF POWER MOSFET
CASE 466–02, STYLE 1
(PLD 1.5)
Motorola, Inc. 1998
G
D
S
REV 1
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相关代理商/技术参数 |
参数描述 |
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