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参数资料
| 型号： | MRF1507T1 |
| 元件分类： | 功率晶体管 |
| 英文描述： | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封装： | POWER, PLASTIC, CASE 466-02, 4 PIN |
| 文件页数： | 5/12页 |
| 文件大小： | 173K |
| 代理商： | MRF1507T1 |
LIFETIME
BUY
LAST
ORDER
30JUN02
LAST
SHIP
30DEC0
2
MRF1507
2
MOTOROLA RF DEVICE DATA
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Zero Gate Voltage Drain Current
(VDS = 25 Vdc, VGS = 0)
IDSS
—
1
Adc
Gate–Source Leakage Current
(VGS = 20 Vdc, VDS = 0)
IGSS
—
1
Adc
ON CHARACTERISTICS
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 100 Adc)
VGS(th)
2.5
3.4
—
Vdc
Drain–Source On–Voltage
(VGS = 10 Vdc, ID = 2 Adc)
VDS(on)
0.3
0.44
—
Vdc
Forward Transconductance
(VDS = 10 Vdc, ID = 2 Adc)
gfs
1.30
1.80
—
S
DYNAMIC CHARACTERISTICS
Input Capacitance
(VDS = 7.5 Vdc, VGS = 0, f = 1 MHz)
Ciss
—
48
—
pF
Output Capacitance
(VDS = 7.5 Vdc, VGS = 0, f = 1 MHz)
Coss
—
40.5
—
pF
Reverse Transfer Capacitance
(VDS = 7.5 Vdc, VGS = 0, f = 1 MHz)
Crss
—
5.2
—
pF
FUNCTIONAL TESTS (In Motorola Test Fixture)
Common–Source Amplifier Power Gain
(VDD = 7.5 Vdc, Pin = 29 dBm, IDQ = 150 mA, f = 520 MHz)
Gps
10
11
—
dB
Drain Efficiency
(VDD = 7.5 Vdc, Pin = 29 dBm, IDQ = 150 mA, f = 520 MHz)
η
50
65
—
%
Pout
(VDD = 7.5 Vdc, Pin = 29 dBm, IDQ = 150 mA, f = 520 MHz)
Pout
8
9.9
—
W
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MRF15090 | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:RF POWER TRANSISTOR |
| MRF150J | 功能描述:射频MOSFET电源晶体管 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF150MP | 制造商:M/A-COM Technology Solutions 功能描述:RF POWER TRANSISTOR MOSFET |
| MRF151 | 功能描述:射频MOSFET电源晶体管 5-175MHz 150Watts 50Volt Gain 18dB RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF1511N | 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistor |
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