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参数资料
| 型号： | MRF136Y |
| 厂商： | MOTOROLA INC |
| 元件分类： | 功率晶体管 |
| 英文描述： | 2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 文件页数： | 1/12页 |
| 文件大小： | 374K |
| 代理商： | MRF136Y |
1
MRF136 MRF136Y
MOTOROLA RF DEVICE DATA
The RF MOSFET Line
RF Power
Field-Effect Transistors
N-Channel Enhancement-Mode MOSFETs
. . . designed for wideband large–signal amplifier and oscillator applications up
to 400 MHz range, in either single ended or push–pull configuration.
Guaranteed 28 Volt, 150 MHz Performance
MRF136
MRF136Y
Output Power = 15 Watts
Output Power = 30 Watts
Narrowband Gain = 16 dB (Typ)
Broadband Gain = 14 dB (Typ)
Efficiency = 60% (Typical)
Efficiency = 54% (Typical)
Small–Signal and Large–Signal
Characterization
100% Tested For Load
Mismatch At All Phase
Angles With 30:1 VSWR
Space Saving Package For
Push–Pull Circuit
Applications — MRF136Y
Excellent Thermal Stability,
Ideally Suited For Class A
Operation
Facilitates Manual Gain
Control, ALC and
Modulation Techniques
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Rating
Symbol
MRF136
MRF136Y
Unit
Drain–Source Voltage
VDSS
65
Vdc
Drain–Gate Voltage (RGS = 1.0 M)
VDGR
65
Vdc
Gate–Source Voltage
VGS
±40
Vdc
Drain Current — Continuous
ID
2.5
5.0
Adc
Total Device Dissipation @ TC = 25°C
Derate above 25
°C
PD
55
0.314
100
0.571
Watts
W/
°C
Storage Temperature Range
Tstg
– 65 to +150
°C
Operating Junction Temperature
TJ
200
°C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Characteristic
Symbol
MRF136
MRF136Y
Unit
Thermal Resistance, Junction to Case
R
θJC
3.2
1.75
°C/W
Handling and Packaging — MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
Order this document
by MRF136/D
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
MRF136
MRF136Y
15 W, 30 W, to 400 MHz
N–CHANNEL
MOS BROADBAND
RF POWER FETs
CASE 211–07, STYLE 2
MRF136
CASE 319B–02, STYLE 1
MRF136Y
Motorola, Inc. 1994
D
G
S
D
G
S
(FLANGE)
MRF136
MRF136Y
D
G
REV 6
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MRF137 | 功能描述:射频MOSFET电源晶体管 5-400MHz 30Watts 28Volt Gain 13dB RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF13750H-915MHZ | 功能描述:MRF13750H-915MHZ 制造商:nxp usa inc. 系列:- 零件状态:在售 晶体管类型:LDMOS（双） 频率:700MHz ~ 1.3GHz 增益:20.6dB 电压 - 测试:50V 额定电流:10μA 噪声系数:- 功率 - 输出:650W 电压 - 额定:105V 封装/外壳:SOT-979A 供应商器件封装:NI-1230H-4S 标准包装:1 |
| MRF13750HR5 | 功能描述:RF POWER LDMOS TRANSISTOR 750 W 制造商:nxp usa inc. 系列:- 零件状态:在售 晶体管类型:LDMOS（双） 频率:700MHz ~ 1.3GHz 增益:20.6dB 电压 - 测试:50V 额定电流:10μA 噪声系数:- 功率 - 输出:650W 电压 - 额定:105V 封装/外壳:SOT-979A 供应商器件封装:NI-1230H-4S 标准包装:1 |
| MRF138 | 制造商:ASI 制造商全称:ASI 功能描述:N-Channel Enhancement Mode VHF POWER MOSFET |
| MRF140 | 制造商:M/A-COM Technology Solutions 功能描述:TRANS MOSFET N-CH 65V 16A 4PIN P208 - Bulk 制造商:M/A-COM Technology Solutions 功能描述:RF POWER TRANSISTOR MOSFET |
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