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参数资料
| 型号： | MRF136Y |
| 厂商： | MOTOROLA INC |
| 元件分类： | 功率晶体管 |
| 英文描述： | 2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 文件页数： | 9/12页 |
| 文件大小： | 374K |
| 代理商： | MRF136Y |
MRF136 MRF136Y
6
MOTOROLA RF DEVICE DATA
Figure 15. Output Power versus Input Power
Figure 16. Power Gain versus Frequency
Figure 17. Drain Efficiency versus Frequency
Figure 18. Output Power versus Gate Voltage
Figure 19. Output Power versus Input Power
Figure 20. Output Power versus Gate Voltage
MRF136Y
TYPICAL PERFORMANCE IN BROADBAND TEST CIRCUIT
(Refer to Figure 2)
TYPICAL 400 MHz PERFORMANCE
0
40
80
120
160
f, FREQUENCY (MHz)
20
60
100
140
100
90
80
70
60
50
40
30
20
10
0
VDD = 28 V
IDQ = 100 mA
Pin = CONSTANT
TYPICAL DEVICE
SHOWN, VGS(th) = 3 V
VDD = 28 V
IDQ = 100 mA
Pout = 30 W
VDD = 28 V
IDQ = 100 mA
Pout = 30 W
VDD = 28 V
IDQ = 100 mA
VDD = 28 V
IDQ = 100 mA
f = 400 MHz
VDD = 28 V
IDQ = 100 mA
Pin = CONSTANT
TYPICAL DEVICE
SHOWN, VGS(th) = 3 V
40
35
30
25
20
15
10
5
0
–4
–2
0
2
4
VGS, GATE–SOURCE VOLTAGE (VOLTS)
P out
,OUTPUT
POWER
(W
A
TTS)
–3
–1
1
3
40
35
30
25
20
15
10
5
0
1
2.5
3.5
Pin, INPUT POWER (WATTS)
P out
,OUTPUT
POWER
(W
A
TTS)
0.5
1.5
2
3
40
35
30
25
20
15
10
5
0
P out
,OUTPUT
POWER
(W
A
TTS)
16
14
12
10
8
6
4
2
0
40
80
120
160
f, FREQUENCY (MHz)
POWER
GAIN
(dB)
20
60
100
140
0.5
2
2.5
Pin, INPUT POWER (WATTS)
1
1.5
0
–6
VGS, GATE–SOURCE VOLTAGE (VOLTS)
30
25
20
15
10
5
–2
0
2
6
–4
4
P out
,OUTPUT
POWER
(W
A
TTS)
η
,EFFICIENCY
(%)
f = 150 MHz
30 MHz
f = 150 MHz
f = 400 MHz
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MRF137 | 功能描述:射频MOSFET电源晶体管 5-400MHz 30Watts 28Volt Gain 13dB RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF13750H-915MHZ | 功能描述:MRF13750H-915MHZ 制造商:nxp usa inc. 系列:- 零件状态:在售 晶体管类型:LDMOS（双） 频率:700MHz ~ 1.3GHz 增益:20.6dB 电压 - 测试:50V 额定电流:10μA 噪声系数:- 功率 - 输出:650W 电压 - 额定:105V 封装/外壳:SOT-979A 供应商器件封装:NI-1230H-4S 标准包装:1 |
| MRF13750HR5 | 功能描述:RF POWER LDMOS TRANSISTOR 750 W 制造商:nxp usa inc. 系列:- 零件状态:在售 晶体管类型:LDMOS（双） 频率:700MHz ~ 1.3GHz 增益:20.6dB 电压 - 测试:50V 额定电流:10μA 噪声系数:- 功率 - 输出:650W 电压 - 额定:105V 封装/外壳:SOT-979A 供应商器件封装:NI-1230H-4S 标准包装:1 |
| MRF138 | 制造商:ASI 制造商全称:ASI 功能描述:N-Channel Enhancement Mode VHF POWER MOSFET |
| MRF140 | 制造商:M/A-COM Technology Solutions 功能描述:TRANS MOSFET N-CH 65V 16A 4PIN P208 - Bulk 制造商:M/A-COM Technology Solutions 功能描述:RF POWER TRANSISTOR MOSFET |
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