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参数资料
| 型号： | MRF136Y |
| 厂商： | MOTOROLA INC |
| 元件分类： | 功率晶体管 |
| 英文描述： | 2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 文件页数： | 10/12页 |
| 文件大小： | 374K |
| 代理商： | MRF136Y |
7
MRF136 MRF136Y
MOTOROLA RF DEVICE DATA
Figure 21. Large–Signal Series Equivalent
Input Impedance, Zin
MRF136
Figure 22. Large–Signal Series Equivalent
Output Impedance, ZOL*
MRF136
Figure 23. Input and Outut Impedance
MRF136Y
400
200
150
f = 100 MHz
Zin{
VDD = 28 V, IDQ = 25 mA,
Pout = 15 W
{27 Shunt Resistor Gate–to–Ground
f
MHz
Zin{
OHMS
100
150
200
400
7.5 – j9.73
4.11 – j7.56
2.66 – j6.39
2.39 – j2.18
400
200
150
f = 100 MHz
ZOL*
VDD = 28 V, IDQ = 25 mA,
Pout = 15 W
ZOL* = Conjugate of the
optimum load impedance into
which the device operates at
a given output power, voltage
and frequency.
f
MHz
ZOL*
OHMS
100
150
200
400
13.7 – j16.8
9.08 – j15.38
4.74 – j8.92
4.28 – j4.17
400
225
150
f = 30 MHz
ZOL*
100
50
Zin
f = 30 MHz
50
100
150
225
400
Feedback loops: 560 ohms in series with 0.1
F
Drain to gate, each side of push–pull FET
ZOL* = Conjugate of the optimum load imped-
ance into which the device operates at a given
output power, voltage and frequency.
VDD = 28 V, IDQ = 100 mA,
Pout = 30 W
f
MHz
Zin{
Ohms
ZOL*
Ohms
30
50
100
150
225
400
59.3 – j24
48 – j33.5
20.5 – j34.2
4.77 – j25.4
3
– j9.5
2.34 – j3.31
40.1 – j8.52
37 – j11.9
29 – j16.5
20.6 – j19
13 – j16.7
10.2 – j14.3
Zin & ZOL* are given
from drain–to–drain and
gate–to–gate respectively.
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