- 您现在的位置：买卖IC网 > PDF目录98035 > MRF136Y (MOTOROLA INC) 2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET PDF资料下载
参数资料
| 型号： | MRF136Y |
| 厂商： | MOTOROLA INC |
| 元件分类： | 功率晶体管 |
| 英文描述： | 2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 文件页数： | 5/12页 |
| 文件大小： | 374K |
| 代理商： | MRF136Y |
MRF136 MRF136Y
2
MOTOROLA RF DEVICE DATA
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS (1)
Drain–Source Breakdown Voltage
(VGS = 0, ID = 5.0 mA)
V(BR)DSS
65
—
Vdc
Zero–Gate Voltage Drain Current
(VDS = 28 V, VGS = 0)
IDSS
—
2.0
mAdc
Gate–Source Leakage Current
(VGS = 40 V, VDS = 0)
IGSS
—
1.0
Adc
ON CHARACTERISTICS (1)
Gate Threshold Voltage
(VDS = 10 V, ID = 25 mA)
VGS(th)
1.0
3.0
6.0
Vdc
Forward Transconductance
(VDS = 10 V, ID = 250 mA)
gfs
250
400
—
mmhos
DYNAMIC CHARACTERISTICS (1)
Input Capacitance
(VDS = 28 V, VGS = 0, f = 1.0 MHz)
Ciss
—
24
—
pF
Output Capacitance
(VDS = 28 V, VGS = 0, f = 1.0 MHz)
Coss
—
27
—
pF
Reverse Transfer Capacitance
(VDS = 28 V, VGS = 0, f = 1.0 MHz)
Crss
—
5.5
—
pF
FUNCTIONAL CHARACTERISTICS (2)
Noise Figure
MRF136
(VDS = 28 Vdc, ID = 500 mA, f = 150 MHz)
NF
—
1.0
—
dB
Common Source Power Gain (Figure 1)
MRF136
(VDD = 28 Vdc, Pout = 15 W, f = 150 MHz, IDQ = 25 mA)
Gps
13
16
—
dB
Common Source Power Gain (Figure 2)
MRF136Y
(VDD = 28 Vdc, Pout = 30 W, f = 150 MHz, IDQ = 100 mA)
Gps
12
14
—
dB
Drain Efficiency (Figure 1)
MRF136
(VDD = 28 Vdc, Pout = 15 W, f = 150 MHz, IDQ = 25 mA)
η
50
60
—
%
Drain Efficiency (Figure 2)
MRF136Y
(VDD = 28 Vdc, Pout = 30 W, f = 150 MHz, IDQ = 100 mA)
η
50
54
—
%
Electrical Ruggedness (Figure 1)
MRF136
(VDD = 28 Vdc, Pout = 15 W, f = 150 MHz, IDQ = 25 mA,
VSWR 30:1 at all Phase Angles)
ψ
No Degradation in Output Power
Electrical Ruggedness (Figure 2)
MRF136Y
(VDD = 28 Vdc, Pout = 30 W, f = 150 MHz, IDQ = 100 mA,
VSWR 30:1 at all Phase Angles)
ψ
No Degradation in Output Power
NOTES:
1. For MRF136Y, each side measured separately.
2. For MRF136Y measured in push–pull configuration.
相关PDF资料 |
PDF描述 |
|---|---|
| MRF136 | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| MRF1507T1 | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| MRF1508 | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| MRF1508T1 | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| MRF1508 | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MRF137 | 功能描述:射频MOSFET电源晶体管 5-400MHz 30Watts 28Volt Gain 13dB RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF13750H-915MHZ | 功能描述:MRF13750H-915MHZ 制造商:nxp usa inc. 系列:- 零件状态:在售 晶体管类型:LDMOS（双） 频率:700MHz ~ 1.3GHz 增益:20.6dB 电压 - 测试:50V 额定电流:10μA 噪声系数:- 功率 - 输出:650W 电压 - 额定:105V 封装/外壳:SOT-979A 供应商器件封装:NI-1230H-4S 标准包装:1 |
| MRF13750HR5 | 功能描述:RF POWER LDMOS TRANSISTOR 750 W 制造商:nxp usa inc. 系列:- 零件状态:在售 晶体管类型:LDMOS（双） 频率:700MHz ~ 1.3GHz 增益:20.6dB 电压 - 测试:50V 额定电流:10μA 噪声系数:- 功率 - 输出:650W 电压 - 额定:105V 封装/外壳:SOT-979A 供应商器件封装:NI-1230H-4S 标准包装:1 |
| MRF138 | 制造商:ASI 制造商全称:ASI 功能描述:N-Channel Enhancement Mode VHF POWER MOSFET |
| MRF140 | 制造商:M/A-COM Technology Solutions 功能描述:TRANS MOSFET N-CH 65V 16A 4PIN P208 - Bulk 制造商:M/A-COM Technology Solutions 功能描述:RF POWER TRANSISTOR MOSFET |
发布紧急采购，3分钟左右您将得到回复。