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参数资料
| 型号： | MRF1090MA |
| 元件分类： | 功率晶体管 |
| 英文描述： | L BAND, Si, NPN, RF POWER TRANSISTOR |
| 封装： | CASE 332-04, 4 PIN |
| 文件页数： | 2/4页 |
| 文件大小： | 127K |
| 代理商： | MRF1090MA |
ELECTRICAL CHARACTERISTICS — continued (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
DYNAMIC CHARACTERISTICS
Output Capacitance
(VCB = 50 Vdc, IE = 0, f = 1.0 MHz)
Cob
—
12
16
pF
FUNCTIONAL TESTS (Pulse Width = 10
s, Duty Cycle = 1.0%)
Common–Base Amplifier Power Gain
(VCC = 50 Vdc, Pout = 90 W pk, f = 1090 MHz)
GPB
8.4
10.8
—
dB
Collector Efficiency
(VCC = 50 Vdc, Pout = 90 W pk, f = 1090 MHz)
η
35
40
—
%
Load Mismatch
(VCC = 50 Vdc, Pout = 90 W pk, f = 1090 MHz,
VSWR = 10:1 All Phase Angles)
ψ
No Degradation in Power Output
Figure 1. 1090 MHz Test Circuit
C1, C2 — 220 pF Chip Capacitor, 100–mil ATC
C3 — 0.1
F
C4 — 47
F/75 V
L1, L2 — 3 Turns #18 AWG, 1/8
″ ID
Z1–Z9 — Distributed Microstrip Elements,
See Photomaster
Board Material — 0.031
″ Thick Glass Teflon, εr = 2.5
RF
OUTPUT
DUT
RF
INPUT
50 Vdc
C2
C3
C4
L1L2
Z1
Z2
Z3
Z4
Z5
Z6
Z7
Z8
Z9
C1
-
+
Figure 2. Output Power versus Input Power
Figure 3. Output Power versus Frequency
120
100
80
60
40
20
36
9
12
15
0
Pin, INPUT POWER (WATTS pk)
P
,OUTPUT
POWER
(W
ATTS
pk)
out
120
100
80
60
40
20
f, FREQUENCY (MHz)
P
,OUTPUT
POWER
(W
ATTS
pk)
out
VCC = 50 V
tp = 10 s
D = 1%
7.5 W pk
4.5 W pk
9 W pk
6 W pk
Pin = 10.5 W pk
f = 960 MHz
1090 MHz
1215 MHz
VCC = 50 V
tp = 10 s
D = 1%
960
1090
1215
2
REV 9
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相关代理商/技术参数 |
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