参数资料
型号: MRF1150MA
元件分类: 功率晶体管
英文描述: L BAND, Si, NPN, RF POWER TRANSISTOR
封装: CASE 332-04, 4 PIN
文件页数: 3/4页
文件大小: 150K
代理商: MRF1150MA
Figure 4. Output Power versus Supply Voltage
Figure 5. Power Gain versus Frequency
Figure 6. Series Equivalent Input/Output Impedance
f
MHz
Zin
Ohms
ZOL*
Ohms
960
1090
1215
1.5 + j9.6
5.0 + j7.5
2.4 + j5.6
2.6 + j4.1
2.7 + j4.6
2.8 + j5.3
Pout = 150 W pk VCC = 50 V
tp = 10 s D = 1%
G
PB
,POWER
GAIN
(dB)
f = 1090 MHz
tp = 10 s
D = 1%
Po = 150 W pk
VCC = 50 V
tp = 10 s
D = 1%
20
10
20
30
40
50
0
VCC, SUPPLY VOLTAGE (VOLTS)
P
,OUTPUT
POWER
(W
ATTS
pk)
out
14
12
10
8
6
4
960
1090
1215
f, FREQUENCY (MHz)
515
25
35
45
Pin = 20 W pk
17.5 W pk
12.5 W pk
15 W pk
10 W pk
200
150
100
50
ZOL* = Conjugate of the optimum load
ZOL* = impedance into which the device
ZOL* = output operates at a given output
ZOL* = power, voltage, and frequency.
Zin
f = 960 MHz
1215
ZOL*
1090
0
5.0
10
f = 960 MHz
1215
1090
15
5.0
10
15
Figure 7. Typical Pulse Performance
Pout = 150 W pk
VCC = 50 V
tp = 10 s
D = 1%
SCALE 2 s/DIV
3
REV 9
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