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参数资料
| 型号： | MRF138 |
| 厂商： | ADVANCED SEMICONDUCTOR INC |
| 元件分类： | 功率晶体管 |
| 英文描述： | N-Channel Enhancement Mode VHF POWER MOSFET |
| 中文描述： | VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封装： | 0.380 INCH, FM-4 |
| 文件页数： | 1/1页 |
| 文件大小： | 25K |
| 代理商： | MRF138 |
A D V A N C E D S E M I C O N D U C T O R, I N C.
REV.A
a
7525 ETHEL AVENUE
NORTH HOLLYWOOD, CA 91605
(818) 982-1200
FAX (818) 765-3004 1/1
Specifications are subject to change without notice.
CHARACTERISTICS
T
C
= 25°C
SYMBOL
V
(BR)DSS
V
GS
= 0 V I
DS
= 10 mA
I
DSS
V
DS
= 28 V V
GS
= 0 V
I
GSS
V
DS
= 0 V V
GS
= 20 V
V
GS(th)
V
DS
= 10 V I
D
= 10 mA
G
FS
V
DS
= 10 V I
D
= 2.5 mA
NONE
TEST CONDITIONS
MINIMUM TYPICAL MAXIMUM
65
---
UNITS
V
---
---
---
5.0
mA
μ
A
V
---
---
0.1
1.0
---
6.0
0.8
---
---
mho
C
iss
C
oss
C
rss
P
G
η
D
V
DS
= 28 V V
GS
= 0 V f = 1.0 MHz
55
70
14
pF
V
DD
= 28 V I
DQ
= 100 mA P
OUT
= 30 W
P
IN
= 1.5 W f = 175 MHz
17
40
dB
%
VHF POWER MOSFET
N-Channel Enhancement Mode
MRF138
DESCRIPTION:
The
ASI MRF138
is a N-Channel
enhancement mode MOSFET,
intended for use in 28V applications up
to 175 MHz.
FEATURES:
P
G
= 17 dB Typ. at 30 W /30MHz
30:1 Load VSWR
Capability
Omnigold
Metalization System
MAXIMUM RATINGS
I
D
V
(BR)DSS
V
DGR
V
GS
P
DISS
T
J
T
STG
θ
JC
6.0 A
65 V
65 V
± 40 V
115 W @ T
C
= 25 °C
-65 °C to +200 °C
-65 °C to +150 °C
1.52 °C/W
PACKAGE STYLE .380 4L FLG
MINIMUM
inches / mm
.970 / 24.64
B
C
D
E
F
G
A
MAXIMUM
inches / mm
.385 / 9.78
.980 / 24.89
H
.160 / 4.06
.180 / 4.57
DIM
.220 / 5.59
.230 / 5.84
.105 / 2.67
.085 / 2.16
I
J
.240 / 6.10
.255 / 6.48
.785 / 19.94
F
B
G
.125
.125 NOM.
FULL R
D
E
C
H
.112 x 45°
A
I
J
.004 / 0.10
.006 / 0.15
.280 / 7.11
.720 / 18.29
.730 / 18.54
S
G
S
D
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| MRF140 | 制造商:M/A-COM Technology Solutions 功能描述:TRANS MOSFET N-CH 65V 16A 4PIN P208 - Bulk 制造商:M/A-COM Technology Solutions 功能描述:RF POWER TRANSISTOR MOSFET |
| MRF140MP | 制造商:M/A-COM Technology Solutions 功能描述:RF POWER TRANSISTOR MOSFET |
| MRF141 | 功能描述:射频MOSFET电源晶体管 RF Transistor RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
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| MRF141MP | 制造商:M/A-COM Technology Solutions 功能描述:RF POWER TRANSISTOR MOSFET |
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