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参数资料
| 型号： | MRF1511NT1 |
| 厂商： | FREESCALE SEMICONDUCTOR INC |
| 元件分类： | 功率晶体管 |
| 英文描述： | VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封装： | ROHS COMPLIANT, PLASTIC, PLD-1.5, CASE 466-03, 4 PIN |
| 文件页数： | 12/14页 |
| 文件大小： | 466K |
| 代理商： | MRF1511NT1 |
MRF1511NT1
7
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
210
109
TJ, JUNCTION TEMPERATURE (°C)
This above graph displays calculated MTTF in hours x ampere2
drain current. Life tests at elevated temperatures have correlated to
better than
±10% of the theoretical prediction for metal failure. Divide
MTTF factor by ID2 for MTTF in a particular application.
108
107
MTTF
FACT
OR
(HOURS
X
AMPS
2 )
90
110
130
150
170
190
100
120
140
160
180
200
Figure 19. MTTF Factor versus Junction Temperature
相关PDF资料 |
PDF描述 |
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| MRF1511T1 | VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| MRF1513NT1 | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| MRF1513T1 | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| MRF1513T1 | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| MRF1513T1 | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MRF1511NT1_06 | 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistor |
| MRF1511NT1_08 | 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistor |
| MRF1511T1 | 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistor |
| MRF1513N | 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistor |
| MRF1513NT1 | 功能描述:射频MOSFET电源晶体管 RF LDMOS FET PLD1.5 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
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