参数资料
型号: MRF1511NT1
厂商: FREESCALE SEMICONDUCTOR INC
元件分类: 功率晶体管
英文描述: VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
封装: ROHS COMPLIANT, PLASTIC, PLD-1.5, CASE 466-03, 4 PIN
文件页数: 9/14页
文件大小: 466K
代理商: MRF1511NT1
4
RF Device Data
Freescale Semiconductor
MRF1511NT1
TYPICAL CHARACTERISTICS, 135 - 175 MHz
2
Pout, OUTPUT POWER (WATTS)
50
0
70
010
Ef
f,DRAIN
EFFICIENCY
(%)
30
60
40
3
1
Ef
f,DRAIN
EFFICIENCY
(%)
Figure 4. Gain versus Output Power
Pout, OUTPUT POWER (WATTS)
8
6
14
Figure 5. Drain Efficiency versus Output Power
2
GAIN
(dB)
5
Figure 6. Output Power versus Biasing Current
12
IDQ, BIASING CURRENT (mA)
4
Figure 7. Drain Efficiency versus
Biasing Current
80
IDQ, BIASING CURRENT (mA)
Figure 8. Output Power versus Supply Voltage
4
VDD, SUPPLY VOLTAGE (VOLTS)
2
Figure 9. Drain Efficiency versus Supply Voltage
VDD, SUPPLY VOLTAGE (VOLTS)
30
14
8
4
0
40
60
70
40
400
0
8
14
600
1000
80
5
6
10
16
200
50
4
12
P out
,
OUTPUT
POWER
(W
A
TTS)
200
1000
400
600
P out
,
OUTPUT
POWER
(W
A
TTS)
614
16
12
612
816
3
1
60
4
6
10
12
Ef
f,DRAIN
EFFICIENCY
(%)
50
70
47
58
69
20
10
175 MHz
155 MHz
135 MHz
VDD = 7.5 V
175 MHz
155 MHz
135 MHz
VDD = 7.5 V
710
9
8
6
800
7
8
9
11
175 MHz
155 MHz
135 MHz
VDD = 7.5 V
Pin = 27 dBm
800
175 MHz
155 MHz
135 MHz
VDD = 7.5 V
Pin = 27 dBm
10
175 MHz
155 MHz
135 MHz
IDQ = 150 mA
Pin = 27 dBm
10
175 MHz
155 MHz
135 MHz
IDQ = 150 mA
Pin = 27 dBm
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