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参数资料
| 型号： | MRF1511NT1 |
| 厂商： | FREESCALE SEMICONDUCTOR INC |
| 元件分类： | 功率晶体管 |
| 英文描述： | VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封装： | ROHS COMPLIANT, PLASTIC, PLD-1.5, CASE 466-03, 4 PIN |
| 文件页数： | 13/14页 |
| 文件大小： | 466K |
| 代理商： | MRF1511NT1 |
8
RF Device Data
Freescale Semiconductor
MRF1511NT1
Note: ZOL* was chosen based on tradeoffs between gain, drain efficiency, and device stability.
Figure 20. Series Equivalent Input and Output Impedance
Zo = 10 Ω
Zin
= Complex conjugate of source
impedance with parallel 15 Ω
resistor and 24 pF capacitor in
series with gate. (See Figure 10).
ZOL* = Complex conjugate of the load
impedance at given output power,
voltage, frequency, and ηD > 50 %.
f
MHz
Zin
Ω
ZOL*
Ω
135
20.1 -j0.5
2.53 -j2.61
Zin
= Complex conjugate of source
impedance with parallel 15 Ω
resistor and 68 pF capacitor in
series with gate. (See Figure 1).
ZOL* = Complex conjugate of the load
impedance at given output power,
voltage, frequency, and ηD > 50 %.
VDD = 7.5 V, IDQ = 150 mA, Pout = 8 W
155
17.0 +j3.6
3.01 -j2.48
175
15.2 +j7.9
2.52 -j3.02
f
MHz
Zin
Ω
ZOL*
Ω
66
25.3 -j0.31 3.62 -j0.751
VDD = 7.5 V, IDQ = 150 mA, Pout = 8 W
77
25.6 +j3.62 3.59 -j0.129
88
26.7 +j6.79 3.37 -j0.173
ZOL*
Zin
135
155
f = 175 MHz
135
155
f = 175 MHz
66
77
Zin
f = 88 MHz
66
77
f = 88 MHz
ZOL*
Zin
Z OL*
Input
Matching
Network
Device
Under Test
Output
Matching
Network
相关PDF资料 |
PDF描述 |
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| MRF1511T1 | VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| MRF1513NT1 | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| MRF1513T1 | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| MRF1513T1 | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MRF1511NT1_06 | 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistor |
| MRF1511NT1_08 | 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistor |
| MRF1511T1 | 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistor |
| MRF1513N | 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistor |
| MRF1513NT1 | 功能描述:射频MOSFET电源晶体管 RF LDMOS FET PLD1.5 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
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