- 您现在的位置：买卖IC网 > PDF目录371143 > MRF1535FT1 (MOTOROLA INC) RF Power Field Effect Transistors PDF资料下载
参数资料
| 型号： | MRF1535FT1 |
| 厂商： | MOTOROLA INC |
| 元件分类： | 功率晶体管 |
| 英文描述： | RF Power Field Effect Transistors |
| 中文描述： | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-272 |
| 封装： | PLASTIC, TO-272, CASE 1264A-02, 6 PIN |
| 文件页数： | 10/16页 |
| 文件大小： | 257K |
| 代理商： | MRF1535FT1 |
10
RF Device Data
Freescale Semiconductor
MRF1535NT1 MRF1535FNT1 MRF1535T1 MRF1535FT1
MOUNTING
The specified maximum thermal resistance of 0.9
°
C/W as-
sumes a majority of the 0.170
″
x 0.608
″
source contact on
the back side of the package is in good contact with an ap-
propriate heat sink. As with all RF power devices, the goal of
the thermal design should be to minimize the temperature at
the back side of the package. Refer to Freescale Application
Note AN4005/D, “Thermal Management and Mounting Meth-
od for the PLD
1.5 RF Power Surface Mount Package,” and
Engineering Bulletin EB209/D, “Mounting Method for RF
Power Leadless Surface Mount Transistor” for additional in-
formation.
AMPLIFIER DESIGN
Impedance matching networks similar to those used with
bipolar transistors are suitable for this device. For examples
see Freescale Application Note AN721, “Impedance
Matching Networks Applied to RF Power Transistors.”
Large
signal impedances are provided, and will yield a good
first pass approximation.
Since RF power MOSFETs are triode devices, they are not
unilateral. This coupled with the very high gain of this device
yields a device capable of self oscillation. Stability may be
achieved by techniques such as drain loading, input shunt
resistive loading, or output to input feedback. The RF test fix-
ture implements a parallel resistor and capacitor in series
with the gate, and has a load line selected for a higher effi-
ciency, lower gain, and more stable operating region.
Two
port stability analysis with this device’s
S
parameters provides a useful tool for selection of loading
or feedback circuitry to assure stable operation. See Free-
scale Application Note AN215A, “RF Small
Signal Design
Using Two
Port Parameters” for a discussion of two port
network theory and stability.
相关PDF资料 |
PDF描述 |
|---|---|
| MRF16006 | RF POWER TRANSISTOR NPN SILICON |
| MRF160 | RF Power FET(射频功率场效应管) |
| MRF166C | RF Power FET(射频功率场效应管) |
| MRF166 | MOSFET BROADBAND RF POWER FETs |
| MRF171A | RF MOSFET(射频MOS场效应管) |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MRF1535N | 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors |
| MRF1535NT1 | 功能描述:射频MOSFET电源晶体管 RF LDMOS FET TO-272N RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF1535NT1_06 | 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors |
| MRF1535NT1_08 | 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs |
| MRF1535NT1_0806 | 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors |
发布紧急采购，3分钟左右您将得到回复。