- 您现在的位置：买卖IC网 > PDF目录371143 > MRF166 (MOTOROLA INC) MOSFET BROADBAND RF POWER FETs PDF资料下载
参数资料
| 型号： | MRF166 |
| 厂商： | MOTOROLA INC |
| 元件分类： | 功率晶体管 |
| 英文描述： | MOSFET BROADBAND RF POWER FETs |
| 中文描述： | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 文件页数： | 1/8页 |
| 文件大小： | 154K |
| 代理商： | MRF166 |
1
MRF166 MRF166C
MOTOROLA RF DEVICE DATA
Motorola, Inc. 1994
The RF MOSFET Line
N–Channel Enhancement Mode MOSFETs
Designed primarily for wideband large–signal output and driver from 30–500
MHz.
Low Crss — 4.5 pF @ VDS = 28 V
MRF166C — Typical Performance at 400 MHz, 28 Vdc
Output Power = 20 W
Gain = 17 dB
Efficiency = 55%
Optional 4–Lead Flange Package (MRF166)
Replacement for Industry Standards such as MRF136, DV2820, BLF244,
SD1902, and ST1001
100% Tested for Load Mismatch at all Phase Angles with 30:1 VSWR
Facilitates Manual Gain Control, ALC and Modulation Techniques
Excellent Thermal Stability, Ideally Suited for Class A Operation
Circuit board photomaster available upon request by
contacting RF Tactical Marketing in Phoenix, AZ.
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Drain–Gate Voltage
VDSS
VDGR
65
Vdc
Drain–Gate Voltage
(RGS = 1.0 M
)
65
Vdc
Gate–Source Voltage
VGS
ID
PD
±
40
Adc
Drain Current — Continuous
4.0
Adc
Total Device Dissipation @ TC = 25
°
C
Derate Above 25
°
C
70
0.4
Watts
W/
°
C
Storage Temperature Range
Tstg
TJ
–65 to 150
°
C
Operating Junction Temperature
200
°
C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
R
θ
JC
2.5
°
C/W
NOTE —
CAUTION
— MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
Order this document
by MRF166/D
SEMICONDUCTOR TECHNICAL DATA
20 W, 500 MHz
MOSFET
BROADBAND
RF POWER FETs
CASE 211–07, STYLE 2
CASE 319–07, STYLE 3
D
G
S
REV 6
相关PDF资料 |
PDF描述 |
|---|---|
| MRF171A | RF MOSFET(射频MOS场效应管) |
| MRF18060BS | RF Power MOSFETs(RF功率MOS场效应管) |
| MRF18090A | RF Power MOSFETs(RF功率MOS场效应管) |
| MRF18090AS | RF Power MOSFETs(RF功率MOS场效应管) |
| MRF18090BS | RF Power MOSFETs(RF功率MOS场效应管) |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MRF166C | 功能描述:射频MOSFET电源晶体管 5-500MHz 20Watts 28Volt Gain 13.5dB RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF166W | 制造商:M/A-COM Technology Solutions 功能描述:TRANS MOSFET N-CH 65V 8A - Bulk 制造商:M/A-COM Technology Solutions 功能描述:RF POWER TRANSISTOR MOSFET |
| MRF171 | 功能描述:射频MOSFET电源晶体管 RF Transistor RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF171A | 功能描述:射频MOSFET电源晶体管 100-200MHz 45Watts 28Volt Gain 17dB RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF171AMP | 制造商:M/A-COM Technology Solutions 功能描述:RF POWER TRANSISTOR MOSFET |
发布紧急采购，3分钟左右您将得到回复。