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参数资料
| 型号： | MRF1535NT1 |
| 厂商： | Motorola, Inc. |
| 英文描述： | RF Power Field Effect Transistors |
| 中文描述： | 射频功率场效应晶体管 |
| 文件页数： | 2/16页 |
| 文件大小： | 257K |
| 代理商： | MRF1535NT1 |
2
RF Device Data
Freescale Semiconductor
MRF1535NT1 MRF1535FNT1 MRF1535T1 MRF1535FT1
Table 4. Electrical Characteristics
(T
C
= 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Off Characteristics
Drain
Source Breakdown Voltage
(V
GS
= 0 Vdc, I
D
= 100
μ
Adc)
V
(BR)DSS
60
—
—
Vdc
Zero Gate Voltage Drain Current
(V
DS
= 60 Vdc, V
GS
= 0 Vdc)
I
DSS
—
—
1
μ
Adc
Gate
Source Leakage Current
(V
GS
= 10 Vdc, V
DS
= 0 Vdc)
I
GSS
—
—
0.3
μ
Adc
On Characteristics
Gate Threshold Voltage
(V
DS
= 12.5 Vdc, I
D
= 400
μ
A)
V
GS(th)
1
—
2.6
Vdc
Drain
Source On
Voltage
(V
GS
= 5 Vdc, I
D
= 0.6 A)
R
DS(on)
—
—
0.7
Drain
Source On
Voltage
(V
GS
= 10 Vdc, I
D
= 2.0 Adc)
V
DS(on)
—
—
1
Vdc
Dynamic Characteristics
Input Capacitance (Includes Input Matching Capacitance)
(V
DS
= 12.5 Vdc, V
GS
= 0 V, f = 1 MHz)
C
iss
—
—
250
pF
Output Capacitance
(V
DS
= 12.5 Vdc, V
GS
= 0 V, f = 1 MHz)
C
oss
—
—
150
pF
Reverse Transfer Capacitance
(V
DS
= 12.5 Vdc, V
GS
= 0 V, f = 1 MHz)
C
rss
—
—
20
pF
RF Characteristics
(In Freescale Test Fixture)
Common
Source Amplifier Power Gain
(V
DD
= 12.5 Vdc, P
out
= 35 Watts, I
DQ
= 500 mA)
f = 520 MHz
G
ps
10
—
—
dB
Drain Efficiency
(V
DD
= 12.5 Vdc, P
out
= 35 Watts, I
DQ
= 500 mA)
f = 520 MHz
η
50
—
—
%
Load Mismatch
(V
DD
= 15.6 Vdc, f = 520 MHz, 2 dB Input Overdrive, VSWR 20:1 at
All Phase Angles)
Ψ
No Degradation in Output Power
Before and After Test
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MRF1535NT1_06 | 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors |
| MRF1535NT1_08 | 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs |
| MRF1535NT1_0806 | 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors |
| MRF1535T1 | 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistor |
| MRF154 | 功能描述:射频MOSFET电源晶体管 RF Transistor RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
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