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参数资料
| 型号： | MRF1570NT1 |
| 厂商： | Freescale Semiconductor |
| 文件页数： | 7/23页 |
| 文件大小： | 616K |
| 描述： | IC MOSFET RF N-CHAN TO272-8 WRAP |
| 标准包装： | 500 |
| 晶体管类型： | LDMOS |
| 频率： | 470MHz |
| 增益： | 11.5dB |
| 电压 - 测试： | 12.5V |
| 额定电流： | 1µA |
| 电流 - 测试： | 800mA |
| 功率 - 输出： | 70W |
| 电压 - 额定： | 40V |
| 封装/外壳： | TO-272AA |
| 供应商设备封装： | TO-272-6 |
| 包装： | 带卷 (TR) |
MRF1570NT1 MRF1570FNT1
15
RF Device Data
Freescale Semiconductor
AMPLIFIER DESIGN
Impedance matching networks similar to those used with
bipolar transistors are suitable for this device. For examples
see Freescale Application Note AN721, ?Impedance
Matching Networks Applied to RF Power Transistors.?
Large-signal impedances are provided, and will yield a good
first pass approximation.
Since RF power MOSFETs are triode devices, they are not
unilateral. This coupled with the very high gain of this device
yields a device capable of self oscillation. Stability may be
achieved by techniques such as drain loading, input shunt
resistive loading, or output to input feedback. The RF test fix-
ture implements a parallel resistor and capacitor in series
with the gate, and has a load line selected for a higher effi-
ciency, lower gain, and more stable operating region. See
Freescale Application Note AN215A, ?RF Small-Signal
Design Using Two-Port Parameters? for a discussion of two
port network theory and stability.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MRF1570NT1_08 | 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors |
| MRF1570T1 | 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors |
| MRF157MP | 制造商:M/A-COM Technology Solutions 功能描述:RF POWER TRANSISTOR MOSFET |
| MRF158 | 功能描述:射频MOSFET电源晶体管 5-500MHz 2Watts 28Volt Gain 16dB RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF160 | 功能描述:射频MOSFET电源晶体管 5-500MHz 4Watts 28Volt Gain 16dB RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
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