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参数资料
| 型号： | MRF185 |
| 厂商： | MOTOROLA INC |
| 元件分类： | 功率晶体管 |
| 英文描述： | RF MOSFET(射频MOS场效应管) |
| 中文描述： | 2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封装： | NI-860, CASE 375B-04, 5 PIN |
| 文件页数： | 2/4页 |
| 文件大小： | 63K |
| 代理商： | MRF185 |
MRF185
2
MOTOROLA WIRELESS SEMICONDUCTOR
SOLUTIONS – RF AND IF DEVICE DATA
ELECTRICAL CHARACTERISTICS – continued
(TC = 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
ON CHARACTERISTICS
Gate Quiescent Voltage
(VDS = 26 V, ID = 300 mA per side)
VGS(Q)
3
4
5
Vdc
Delta Quiescent Voltage between sides
(VDS = 26 V, ID = 300 mA per side)
VGS(Q)
–
0.15
0.3
Vdc
Drain–Source On–Voltage
(VGS = 10 V, ID = 3 A per side)
VDS(on)
–
0.75
1
Vdc
Forward Transconductance
(VDS = 10 V, ID = 3 A per side)
gfs
1.6
2
–
s
DYNAMIC CHARACTERISTICS
Output Capacitance
(VDS = 28 V, VGS = 0 V, f = 1 MHz)
Coss
–
38
–
pF
Reverse Transfer Capacitance
(VDS = 28 V, VGS = 0 V, f = 1 MHz)
Crss
–
4.6
6
pF
FUNCTIONAL CHARACTERISTICS
Common Source Power Gain
(VDD = 28 V, Pout = 85 W, f = 960 MHz, IDQ = 600 mA)
Gps
11
14
–
dB
Drain Efficiency
(VDD = 28 V, Pout = 85 W, f = 960 MHz, IDQ = 600 mA)
η
45
53
–
%
Load Mismatch
(VDD = 28 Vdc, Pout = 85 W, f = 960 MHz, IDQ = 600 mA,
Load VSWR 5:1 at All Phase Angles)
Ψ
No Degradation in Output Power
相关PDF资料 |
PDF描述 |
|---|---|
| MRF186 | RF MOSFET(射频MOS场效应管) |
| MRF187S | RF MOSFET(射频MOS场效应管) |
| MRF187 | RF POWER FIELD EFFECT TRANSISTORS |
| MRF187R3 | ER 16 16S D/C PLAS |
| MRF187SR3 | RF POWER FIELD EFFECT TRANSISTORS |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MRF185_02 | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:N-Channel Enhancement-Mode Lateral MOSFET |
| MRF186 | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:The RF MOSFET Line RF POWER FIELD-EFFECT TRANSISTOR Channel Enhancement?Mode Lateral MOSFET |
| MRF187 | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:RF POWER FIELD EFFECT TRANSISTORS |
| MRF187R3 | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:RF POWER FIELD EFFECT TRANSISTORS |
| MRF187S | 制造商:Motorola Inc 功能描述:MOSFET Transistor, N-Channel, SOT-391BVAR |
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