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参数资料
| 型号： | MRF20030 |
| 厂商： | MOTOROLA INC |
| 元件分类： | 功率晶体管 |
| 英文描述： | RF POWER TRANSISTOR |
| 中文描述： | L BAND, Si, NPN, RF POWER TRANSISTOR |
| 文件页数： | 1/10页 |
| 文件大小： | 111K |
| 代理商： | MRF20030 |
1
MRF20030
MOTOROLA RF DEVICE DATA
Motorola, Inc. 1997
The RF Sub–Micron Bipolar Line
Designed for broadband commercial and industrial applications at frequen-
cies from 1800 to 2000 MHz. The high gain and broadband performance of this
device makes it ideal for large–signal, common–emitter class A and class AB
amplifier applications. Suitable for frequency modulated, amplitude modulated
and multi–carrier base station RF power amplifiers.
Specified 26 Volts, 2.0 GHz, Class AB, Two–Tones Characteristics
Output Power — 30 Watts (PEP)
Power Gain — 9.8 dB
Efficiency — 34%
Intermodulation Distortion — –28 dBc
Typical 26 Volts, 1.88 GHz, Class AB, CW Characteristics
Output Power — 30 Watts
Power Gain — 10.5 dB
Efficiency — 40%
Excellent Thermal Stability
Capable of Handling 3:1 VSWR @ 26 Vdc, 2000 MHz, 30 Watts (PEP)
Output Power
Characterized with Series Equivalent Large–Signal Impedance Parameters
S–Parameter Characterization at High Bias Levels
Designed for FM, TDMA, CDMA, and Multi–Carrier Applications
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector–Emitter Voltage
VCEO
VCES
VCBO
VCER
VEB
IC
PD
25
Vdc
Collector–Emitter Voltage
60
Vdc
Collector–Base Voltage
60
Vdc
Collector–Emitter Voltage (RBE = 100
)
Emitter–Base Voltage
30
Vdc
–3
Vdc
Collector Current – Continuous
4
Adc
Total Device Dissipation @ TC = 25
°
C
Derate above 25
°
C
125
0.71
Watts
W/
°
C
Storage Temperature Range
Tstg
TJ
– 65 to +150
°
C
Operating Junction Temperature
200
°
C
THERMAL CHARACTERISTICS
Rating
Symbol
Max
Unit
°
C/W
Thermal Resistance, Junction to Case (1)
R
θ
JC
1.4
(1) Thermal resistance is determined under specified RF operating condition.
ELECTRICAL CHARACTERISTICS
(TC = 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(IC = 25 mAdc, IB = 0)
Collector–Emitter Breakdown Voltage
(IC = 25 mAdc, VBE = 0)
Collector–Base Breakdown Voltage
(IC = 25 mAdc, IE = 0)
V(BR)CEO
25
26
—
Vdc
V(BR)CES
60
70
—
Vdc
V(BR)CBO
60
70
—
Vdc
Order this document
by MRF20030/D
SEMICONDUCTOR TECHNICAL DATA
30 W, 2.0 GHz
NPN SILICON
BROADBAND
RF POWER TRANSISTOR
CASE 395D–03, STYLE 1
REV 1
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