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参数资料
| 型号： | MRF21085SR3 |
| 厂商： | MOTOROLA INC |
| 元件分类： | 功率晶体管 |
| 英文描述： | RF Power Field Effect Transistors |
| 中文描述： | S BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封装： | NI-780S, CASE 465A-06, 2 PIN |
| 文件页数： | 6/12页 |
| 文件大小： | 562K |
| 代理商： | MRF21085SR3 |
MRF21085R3 MRF21085SR3 MRF21085LSR3
6
MOTOROLA RF DEVICE DATA
TYPICAL CHARACTERISTICS
55
50
45
40
35
30
25
10
4
Figure 3. 2-Carrier W-CDMA ACPR, IM3, Power Gain and
Drain Efficiency versus Output Power
Figure 4. Intermodulation Distortion
Products versus Output Power
P
out
, OUTPUT POWER (WATTS) PEP
Figure 5. Third Order Intermodulation
Distortion versus Output Power
I
I
,
η
Gp
P
out
, OUTPUT POWER (WATTS Avg.) NCDMA
I
f, FREQUENCY (MHz)
I
,
η
Figure 6. 2-Carrier W-CDMA Broadband
Performance
Figure 7. CW Performance
0
5
10
15
20
25
30
55
50
45
40
35
30
25
1
10
30
V
DD
= 28 Vdc, I
DQ
= 1000 mA
f1 = 2135 MHz, f2 = 2145 MHz
3.84 MHz Channel Bandwidth
45
60
50
40
30
25
5
10
25
30
35
45
10
η
4
I
I
P
out
, OUTPUT POWER (WATTS) PEP
V
DD
= 28 Vdc
I
DQ
= 1000 mA
f1 = 2135 MHz
f2 = 2145 MHz
,
η
Gp
I
1150 mA
1300 mA
1000 mA
I
DQ
= 700 mA
850 mA
12
14
16
18
20
22
24
60
50
40
30
20
10
0
2110
2130
2150
2190
V
DD
= 28 Vdc
P
out
= 19 W (Avg.)
I
DQ
= 1000 mA
Gps
ACPR
η
IRL
P
out
, OUTPUT POWER (WATTS)
Gp
11.5
12
12.5
13
13.5
14
14.5
0
10
20
30
40
50
60
10
100
2
130
V
DD
= 28 Vdc
I
DQ
= 1000 mA
f = 2140 MHz
Gps
η
,
η
η
IM3
Gps
ACPR
15
100
65
7th Order
5th Order
3rd Order
100
V
DD
= 28 Vdc
f1 = 2135 MHz
f2 = 2145 MHz
2090
2170
IM3
40
34
35
36
37
38
32
31
30
29
28
27
24
25
26
27
28
29
V
DD
, DRAIN SUPPLY (V)
Figure 8. Two-Tone Intermodulation Distortion and
Drain Efficiency versus Drain Supply
I
I
,
η
η
I
DQ
= 1000 mA
f = 2140 MHz
10 MHz Tone Spacing
IMD
39
26
Peak/Avg. = 8.3 dB @ 0.01% Probability (CCDF)
55
35
20
40
41
42
25
24
2Carrier WCDMA
10 MHz Carrier Spacing
3.84 MHz Channel Bandwidth
Peak/Avg. = 8.3 dB @ 0.01% Probability (CCDF)
F
Freescale Semiconductor, Inc.
For More Information On This Product,
Go to: www.freescale.com
n
.
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