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参数资料
| 型号： | MRF21180 |
| 厂商： | MOTOROLA INC |
| 元件分类： | 功率晶体管 |
| 英文描述： | RF Power Field Effect Transistor |
| 中文描述： | 2 CHANNEL, S BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封装： | NI-1230, CASE 375D-04, 5 PIN |
| 文件页数： | 1/12页 |
| 文件大小： | 520K |
| 代理商： | MRF21180 |
1
MRF21180R6
Motorola, Inc. 2004
The RF Sub-Micron MOSFET Line
RF Power Field Effect Transistor
N-Channel Enhancement-Mode Lateral MOSFET
Designed for W-CDMA base station applications with frequencies from 2110
to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications.
To be used in Class AB for PCN-PCS/cellular radio and WLL applications.
Typical 2-carrier W-CDMA Performance for V
DD
= 28 Volts,
I
DQ
= 2 x 850 mA, f1 = 2135 MHz, f2 = 2145 MHz,
Channel Bandwidth = 3.84 MHz, Adjacent Channels Measured over
3.84 MHz BW @ f1
- 5
MHz
and
f2 + 5 MHz. Distortion Products
Measured over a 3.84 MHz BW @ f1
- 10 MHz and
f2 + 10 MHz,
Each Carrier Peak/Avg. = 8.3 dB @ 0.01% Probability on CCDF.
Output Power — 38 Watts (Avg.)
Power Gain — 12.1 dB
Efficiency — 22%
IM3 — 37.5 dBc
ACPR — -41 dBc
Internally Input and Output Matched, for Ease of Use
High Gain, High Efficiency, and High Linearity
Integrated ESD Protection
Designed for Maximum Gain and Insertion Phase Flatness
Capable of Handling 5:1 VSWR, @ 28 Vdc, 2110 MHz, 170 Watts (CW)
Output Power
Excellent Thermal Stability
Characterized with Series Equivalent Large-Signal Impedance Parameters
In Tape and Reel. R6 Suffix = 150 Units per 56 mm, 13 inch Reel.
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Drain-Source Voltage
V
DSS
65
Vdc
Gate-Source Voltage
V
GS
-0.5, +15
Vdc
Total Device Dissipation @ T
C
= 25
°
C
Derate above 25
°
C
P
D
380
2.17
Watts
W/
°
C
Storage Temperature Range
T
stg
- 65 to +150
°
C
Operating Junction Temperature
T
J
200
°
C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Value (1)
Unit
Thermal Resistance, Junction to Case
R
θ
JC
0.46
°
C/W
ESD PROTECTION CHARACTERISTICS
Test Conditions
Class
Human Body Model
1 (Minimum)
Machine Model
M3 (Minimum)
(1) Refer to AN1955/D,
Thermal Measurement Methodology of RF Power Amplifiers.
Go to http://www.motorola.com/semiconductors/rf.
Select Documentation/Application Notes - AN1955.
NOTE -
CAUTION
- MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
Order this document
by MRF21180/D
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
MRF21180R6
2170 MHz, 170 W, 28 V
LATERAL N-CHANNEL
RF POWER MOSFET
CASE 375D-04, STYLE 1
NI-1230
REV 4
F
Freescale Semiconductor, Inc.
For More Information On This Product,
Go to: www.freescale.com
n
.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MRF21180R6 | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:RF Power Field Effect Transistor |
| MRF21180R6_06 | 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistor |
| MRF212 | 功能描述:射频放大器 RF Bipolar Trans RoHS:否 制造商:Skyworks Solutions, Inc. 类型:Low Noise Amplifier 工作频率:2.3 GHz to 2.8 GHz P1dB:18.5 dBm 输出截获点:37.5 dBm 功率增益类型:32 dB 噪声系数:0.85 dB 工作电源电压:5 V 电源电流:125 mA 测试频率:2.6 GHz 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:QFN-16 封装:Reel |
| MRF221 | 功能描述:射频双极电源晶体管 RF Transistor RoHS:否 制造商:M/A-COM Technology Solutions 配置:Single 直流集电极/Base Gain hfe Min:40 最大工作频率:30 MHz 集电极—发射极最大电压 VCEO:25 V 发射极 - 基极电压 VEBO:4 V 集电极连续电流:20 A 最大直流电集电极电流: 功率耗散:250 W 封装 / 箱体:Case 211-11 封装:Tray |
| MRF224 | 功能描述:射频放大器 RF Bipolar Trans RoHS:否 制造商:Skyworks Solutions, Inc. 类型:Low Noise Amplifier 工作频率:2.3 GHz to 2.8 GHz P1dB:18.5 dBm 输出截获点:37.5 dBm 功率增益类型:32 dB 噪声系数:0.85 dB 工作电源电压:5 V 电源电流:125 mA 测试频率:2.6 GHz 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:QFN-16 封装:Reel |
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