参数资料
型号: MRF21180
厂商: MOTOROLA INC
元件分类: 功率晶体管
英文描述: RF Power Field Effect Transistor
中文描述: 2 CHANNEL, S BAND, Si, N-CHANNEL, RF POWER, MOSFET
封装: NI-1230, CASE 375D-04, 5 PIN
文件页数: 12/12页
文件大小: 520K
代理商: MRF21180
MRF21180R6
12
MOTOROLA RF DEVICE DATA
PACKAGE DIMENSIONS
CASE 375D-04
ISSUE C
NI-1230
NOTES:
1. INTERPRET DIMENSIONS AND TOLERANCES
PER ASME Y14.5M1994.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION H IS MEASURED 0.030 (0.762) AWAY
FROM PACKAGE BODY.
4. RECOMMENDED BOLT CENTER DIMENSION OF
1.52 (38.61) BASED ON M3 SCREW.
STYLE 1:
PIN 1. DRAIN
2. DRAIN
3. GATE
4. GATE
5. SOURCE
DIM
A
B
C
D
E
F
G
H
K
L
M
MIN
1.615
0.395
0.150
0.455
0.062
0.004
1.400 BSC
0.079
0.117
0.540 BSC
1.219
MAX
1.625
0.405
0.200
0.465
0.066
0.007
MIN
41.02
10.03
3.81
11.56
1.57
0.10
35.56 BSC
2.01
2.97
13.72 BSC
30.96
MAX
41.28
10.29
5.08
11.81
1.68
0.18
MILLIMETERS
INCHES
0.089
0.137
2.26
3.48
N
Q
R
S
1.218
0.120
0.355
0.365
0.013 REF
0.010 REF
0.020 REF
1.242
0.130
0.365
0.375
30.94
3.05
9.01
9.27
31.55
3.30
9.27
9.53
A
G
L
D
K
4X
Q
2X
1
2
4
3
1.241
31.52
aaa
bbb
ccc
0.33 REF
0.25 REF
0.51 REF
SEATING
PLANE
N
C
E
M
M
A
M
aaa
B
M
T
B
B
(FLANGE)
H
F
M
A
M
ccc
B
M
T
(LID)
S
(INSULATOR)
M
A
M
bbb
B
M
T
4X
A
T
M
A
M
bbb
B
M
T
(INSULATOR)
M
A
M
ccc
B
M
T
(LID)
PIN 5
M
A
M
bbb
B
M
T
4
Information in this document is provided solely to enable system and software implementers to use Motorola products. There are no express or implied copyright
licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in this document.
Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and
specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters that may be provided in Motorola
data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including
“Typicals”, must be validated for each customer application by customer’s technical experts. Motorola does not convey any license under its patent rights nor the
rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other
applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury
or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola
and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees
arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that
Motorola was negligent regarding the design or manufacture of the part.
MOTOROLA and the Stylized M Logo are registered in the US Patent and Trademark Office. All other product or service names are the property of their respective
owners. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer.
Motorola Inc. 2004
HOW TO REACH US:
USA/EUROPE/LOCATIONS NOT LISTED
:
Motorola Literature Distribution
P.O. Box 5405, Denver, Colorado 80217
1-800-521-6274 or 480-768-2130
JAPAN
: Motorola Japan Ltd.; SPS, Technical Information Center,
3-20-1, Minami-Azabu, Minato-ku, Tokyo 106-8573, Japan
81-3-3440-3569
ASIA/PACIFIC
: Motorola Semiconductors H.K. Ltd.; Silicon Harbour Centre,
2 Dai King Street, Tai Po Industrial Estate, Tai Po, N.T., Hong Kong
852-26668334
HOME PAGE
: http://motorola.com/semiconductors
F
Freescale Semiconductor, Inc.
For More Information On This Product,
Go to: www.freescale.com
n
.
相关PDF资料
PDF描述
MRF21180R6 RF Power Field Effect Transistor
MRF224 40W, 175MHz RF POWER TRANSISTOR NPN SILICON
MRF240 RF POWER TRANSISTORS NPN SILICON
MRF247 RF POWER TRANSISTOR NPN SILICON
MRF2628 RF POWER TRANSISTOR NPN SILICON
相关代理商/技术参数
参数描述
MRF21180R6 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:RF Power Field Effect Transistor
MRF21180R6_06 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistor
MRF212 功能描述:射频放大器 RF Bipolar Trans RoHS:否 制造商:Skyworks Solutions, Inc. 类型:Low Noise Amplifier 工作频率:2.3 GHz to 2.8 GHz P1dB:18.5 dBm 输出截获点:37.5 dBm 功率增益类型:32 dB 噪声系数:0.85 dB 工作电源电压:5 V 电源电流:125 mA 测试频率:2.6 GHz 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:QFN-16 封装:Reel
MRF221 功能描述:射频双极电源晶体管 RF Transistor RoHS:否 制造商:M/A-COM Technology Solutions 配置:Single 直流集电极/Base Gain hfe Min:40 最大工作频率:30 MHz 集电极—发射极最大电压 VCEO:25 V 发射极 - 基极电压 VEBO:4 V 集电极连续电流:20 A 最大直流电集电极电流: 功率耗散:250 W 封装 / 箱体:Case 211-11 封装:Tray
MRF224 功能描述:射频放大器 RF Bipolar Trans RoHS:否 制造商:Skyworks Solutions, Inc. 类型:Low Noise Amplifier 工作频率:2.3 GHz to 2.8 GHz P1dB:18.5 dBm 输出截获点:37.5 dBm 功率增益类型:32 dB 噪声系数:0.85 dB 工作电源电压:5 V 电源电流:125 mA 测试频率:2.6 GHz 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:QFN-16 封装:Reel