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参数资料
| 型号： | MRF282Z |
| 厂商： | MOTOROLA INC |
| 元件分类： | 功率晶体管 |
| 英文描述： | LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs |
| 中文描述： | L BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 文件页数： | 3/11页 |
| 文件大小： | 142K |
| 代理商： | MRF282Z |
3
MRF282S MRF282Z
MOTOROLA RF DEVICE DATA
Figure 1. Schematic of 1.93 – 2.0 GHz Broadband Test Circuit
B1, B2, B3,
B4, B5, B6
C1, C17
C2, C4, C12
C3, C15
C5, C14
C6, C8, C10, C13
C7
C9, C11
C16
L1
L2
L3
L4
Ferrite Bead, Ferroxcube, 56–590–65–3B
470
μ
F, Electrolytic Capacitor, Mallory
0.6–4.5 pF, Variable Capacitor, Johanson
0.1
μ
F, Chip Capacitor, Kemet
1000 pF, B Case Chip Capacitor, ATC
12 pF, B Case Chip Capacitor, ATC
1.8 pF, B Case Chip Capacitor, ATC
100 pF, B Case Chip Capacitor, ATC
0.4–2.5 pF, Variable Capacitor, Johanson
Straight Wire, 21 AWG, 0.3
″
8 Turns, 0.042
″
ID, 24 AWG, Enamel
9 Turns, 0.046
″
ID, 26 AWG, Enamel
3 Turns, 0.048
″
ID, 25 AWG, Enamel
R1, R2, R3,
R4, R5, R6
Z1
Z2
Z3
Z4
Z5
Z6
Z7
Z8
Z9
Z10
Board
12
, 0.2 W Chip Resistor, Rohm
0.155
″
x 0.08
″
Microstrip
0.280
″
x 0.08
″
Microstrip
0.855
″
x 0.08
″
Microstrip
0.483
″
x 0.08
″
Microstrip
0.200
″
x 0.330
″
Microstrip
0.220
″
x 0.330
″
Microstrip
0.490
″
x 0.330
″
Microstrip
0.510
″
x 0.08
″
Microstrip
0.990
″
x 0.08
″
Microstrip
0.295
″
x 0.08
″
Microstrip
35 Mils Glass Teflon
, Arlon GX–300,
ε
r = 2.55
Input/Output Connectors Type N Flange Mount
RF
INPUT
RF
OUTPUT
C16
Z10
Z1
Z2
Z3
Z4
Z5
Z6
Z7
Z9
VGG
C1
C8
C9
L2
C6
C2
C4
C10
C11
L3
L1
C7
R1
B1
C3
R2
B2
C5
R3
B3
R4
B4
C14 R5
B5
C15 R6
B6
C17
C13
Z8
C12
L4
DUT
+
+
VDD
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MRF282ZR1 | 功能描述:射频MOSFET电源晶体管 RF PWR FET SOE PKG RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF284 | 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors |
| MRF284C | 制造商:Motorola Inc 功能描述:284C |
| MRF284LR1 | 制造商:Freescale Semiconductor 功能描述: |
| MRF284LSR1 | 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors |
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