参数资料
型号: MRF282Z
厂商: MOTOROLA INC
元件分类: 功率晶体管
英文描述: LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs
中文描述: L BAND, Si, N-CHANNEL, RF POWER, MOSFET
文件页数: 8/11页
文件大小: 142K
代理商: MRF282Z
MRF282S MRF282Z
8
MOTOROLA RF DEVICE DATA
Figure 15. Series Equivalent Input and Output Impedence
f
MHz
Zin(1)
ZOL*
1800
1860
1900
1960
2.1 + j1.0
2.0 + j1.2
2.05 + j1.15
1.9 + j1.4
3.8 – j0.15
3.77 – j0.13
3.75 – j0.1
3.65 + j0.1
Zin(1)= Conjugate of fixture gate terminal impedance.
ZOL* = Conjugate of the optimum load impedance at
given output power, voltage, IMD, bias current
and frequency.
VCC = 26 V, ICQ = 75 mA, Pout = 10 W (PEP)
+j1
+j2
+j3
+j5
+j0.5
+j0.2
–j1
–j2
–j3
–j5
–j10
–j0.5
–j0.2
+j10
0.0
0.5
1
2
3
5
ZOL*
2 GHz
Zin
2 GHz
Zo = 5
1.8 GHz
f = 1.8 GHz
2000
1.85 + j1.6
3.55 + j0.2
0.2
相关PDF资料
PDF描述
MRF284 RF Power Field-Effect Transistors
MRF284S RF Power Field-Effect Transistors
MRF313 HIGH-FREQUENCY TRANSISTOR NPN SILICON
MRF314 RF POWER TRANSISTORS NPN SILICON
MRF392 BROADBAND PUSH-PULL RF POWER TRANSISTOR NPN SILICON
相关代理商/技术参数
参数描述
MRF282ZR1 功能描述:射频MOSFET电源晶体管 RF PWR FET SOE PKG RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray
MRF284 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors
MRF284C 制造商:Motorola Inc 功能描述:284C
MRF284LR1 制造商:Freescale Semiconductor 功能描述:
MRF284LSR1 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors