参数资料
型号: MRF284
厂商: MOTOROLA INC
元件分类: 功率晶体管
英文描述: RF Power Field-Effect Transistors
中文描述: S BAND, Si, N-CHANNEL, RF POWER, MOSFET
封装: CASE 360B-05, 3 PIN
文件页数: 5/12页
文件大小: 134K
代理商: MRF284
5
MRF284 MRF284S
MOTOROLA RF DEVICE DATA
TYPICAL CHARACTERISTICS
G
G
Figure 3. Output Power & Power Gain
versus Input Power
35
Pin, INPUT POWER (WATTS)
5
0
2.0
15
25
Figure 4. Output Power versus Frequency
10
1800
1840
f, FREQUENCY (MHz)
45
25
15
1.0
3.0
3.5
35
P
2000
0
P
30
13
9
6
G
1880
1920
Figure 5. Intermodulation Distortion
versus Output Power
– 20
Pout, OUTPUT POWER (WATTS) PEP
– 80
Figure 6. Power Gain and Intermodulation
Distortion versus Supply Voltage
11
VDD, DRAIN SUPPLY VOLTAGE (Vdc)
8
10
I
Figure 7. Intermodulation Distortion
versus Output Power
0.1
Pout, OUTPUT POWER (WATTS) PEP
– 60
10
– 30
Figure 8. Power Gain versus Output Power
Pout, OUTPUT POWER (WATTS) PEP
8
1.0
12
10
1.0
0.1
0.1
9
10
11
10
6
20
22
16
– 40
– 20
I
–40
28
–35
I
VDD = 26 Vdc
IDQ = 200 mA
f = 2000 MHz Single Tone
40
24
26
13
12
–30
–25
–20
–15
–10
– 70
– 60
– 50
– 40
20
30
Pout = 30 W (PEP)
IDQ = 200 mA
f1 = 2000.0 MHz
f2 = 2000.1 MHz
Gpe
Gpe
3rd Order
7th Order
5th Order
Pin = 1 W
4 W
VDD = 26 Vdc
f1 = 2000.0 MHz
f2 = 2000.1 MHz
1.0
100 mA
IDQ = 400 mA
300 mA
200 mA
VDD = 26 Vdc
f1 = 2000.0 MHz
f2 = 2000.1 MHz
14
11
10
20
– 30
18
VDD = 26 Vdc
IDQ = 200 mA
f1 = 2000.0 MHz
f2 = 2000.1 MHz
– 50
Pout
1.5
0.5
2.5
VDD = 26 Vdc
IDQ = 200 mA
Single Tone
IMD
9
7
100 mA
IDQ = 400 mA
300 mA
200 mA
4.0
7
8
10
12
40
1860
1820
1900
1940 1960 1980
2 W
3 W
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