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| 型号： | MRF284 |
| 厂商： | MOTOROLA INC |
| 元件分类： | 功率晶体管 |
| 英文描述： | RF Power Field-Effect Transistors |
| 中文描述： | S BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封装： | CASE 360B-05, 3 PIN |
| 文件页数： | 7/12页 |
| 文件大小： | 134K |
| 代理商： | MRF284 |
7
MRF284 MRF284S
MOTOROLA RF DEVICE DATA
TYPICAL CHARACTERISTICS
1.0
Figure 12. 1.92–2.0 GHz Broadband Circuit Performance
f, FREQUENCY (MHz)
1920
11
G
10
9
8
7
6
5
4
3
1940
1960
1980
2000
Pout = 30 Watts (PEP)
VDD = 26 Vdc, IDQ = 200 mA
Two–Tone
Frequency Delta = 100 kHz
GAIN
η
IMD
VSWR
45
–32
–40
40
30
–36
2.0
3.0
I
E
35
I
D
TJ, JUNCTION TEMPERATURE (
°
C)
This graph displays calculated MTBF in hours x ampere2 drain current.
Life tests at elevated temperature have correlated to better than
±
10%
of the theoretical prediction for metal failure. Divide MTBF factor by ID2
for MTBF in a particular application.
250
200
150
100
50
0
1.E+10
1.E+09
1.E+07
1.E+06
1.E+05
M
1.E+08
2
Figure 13. MTBF Factor versus Junction Temperature
1.E+04
相关PDF资料 |
PDF描述 |
|---|---|
| MRF284S | RF Power Field-Effect Transistors |
| MRF313 | HIGH-FREQUENCY TRANSISTOR NPN SILICON |
| MRF314 | RF POWER TRANSISTORS NPN SILICON |
| MRF392 | BROADBAND PUSH-PULL RF POWER TRANSISTOR NPN SILICON |
| MRF393 | BROADBAND PUSH-PULL RF POWER TRANSISTOR NPN SILICON |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MRF284C | 制造商:Motorola Inc 功能描述:284C |
| MRF284LR1 | 制造商:Freescale Semiconductor 功能描述: |
| MRF284LSR1 | 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors |
| MRF284R5 | 制造商:Motorola Inc 功能描述:284R5 |
| MRF284S | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:RF Power Field-Effect Transistors |
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