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参数资料
| 型号： | MRF323 |
| 厂商： | ADVANCED SEMICONDUCTOR INC |
| 元件分类： | 功率晶体管 |
| 英文描述： | UHF BAND, Si, NPN, RF POWER TRANSISTOR |
| 文件页数： | 1/1页 |
| 文件大小： | 14K |
| 代理商： | MRF323 |
A D V A N C E D S E M I C O N D U C T O R, I N C.
REV. A
7525 ETHEL AVENUE
NORTH HOLLYWOOD, CA 91605 (818) 982-1200 FAX (818) 765-3004
1/1
Specifications are subject to change without notice.
CHARACTERISTICS TC = 25 OC
SYMBOL
TEST CONDITIONS
MINIMUM TYPICAL MAXIMUM
UNITS
BVCBO
IC = 20 mA
60
V
BVCES
IC = 20 mA
60
V
BVCEO
IC = 20 mA
33
V
BVEBO
IE = 2.0 mA
4.0
V
ICBO
VCB = 30 V
2.0
mA
hFE
IC = 1.0 A
VCE = 5.0 V
20
80
---
Cob
VCB = 28 V
f = 1.0 MHz
20
24
pF
GPE
ηηηη
VCC = 28 V
Pout = 20 W
f = 400 MHz
10
50
11
60
dB
%
ψ
VCC = 28 V
Pout = 20 W
f = 400 MHz
VSWR = 30:1 ALL PHASE ANGLES
NO DEGRADATION IN OUTPUT POWER
NPN SILICON RF POWER TRANSISTOR
MRF323
DESCRIPTION:
The
MRF323 is Designed for
Wide Band Large-Signal Driver and
Predriver Applications in the
200 to 500 MHz Range.
FEATURES INCLUDE:
Gold Metalization
30:1 VSWR
MAXIMUM RATINGS
IC
2.2 A (CONT)
3.0 A (PEAK)
VCB
60 V
PDISS
55 W @ TC = 25
OC
TSTG
-65
OC to +150 OC
θθθθ
JC
3.2
OC/W
PACKAGE STYLE .280" 4L STUD
MINIMUM
inches / mm
.003 / 0.08
.270 / 6.86
.117 / 2.97
B
C
D
E
F
G
A
MAXIMUM
.285 / 7.24
.137 / 3.48
.007 / 0.18
inches / mm
H
.245 / 6.22
.255 / 6.48
DIM
1.010 / 25.65
1.055 / 26.80
I
J
.217 / 5.51
.220 / 5.59
K
.175 / 4.45
.285 / 7.24
.275 / 6.99
.572 / 14.53
.640 / 16.26
.130 / 3.30
.230 /5.84
G
K
H
F
E
D
C
B
45°
A
#8-32 UNC
I
J
C
B
E
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