参数资料
型号: MRF390
厂商: ADVANCED SEMICONDUCTOR INC
元件分类: 功率晶体管
英文描述: 14 pin DIP, 5.0 Volt, HCMOS/TTL, Clock Oscillator
中文描述: UHF BAND, Si, NPN, RF POWER TRANSISTOR
封装: FM-8
文件页数: 1/1页
文件大小: 15K
代理商: MRF390
A D V A N C E D S E M I C O N D U C T O R, I N C.
REV. A
7525 ETHEL AVENUE
NORTH HOLLYWOOD, CA 91605
(818) 982-1200
FAX (818) 765-3004 1/1
Specifications are subject to change without notice.
CHARACTERISTICS
T
C
= 25
O
C
SYMBOL
BV
CEO
I
C
= 100 mA
BV
CES
I
C
= 100 mA
BV
EBO
I
E
= 10 mA
TEST CONDITIONS
MINIMUM TYPICAL MAXIMUM
30
UNITS
V
V
V
60
4.0
C
ob
V
CB
= 28 V
f = 1.0 MHz
52
pF
h
FE
P
g
η
c
V
CE
= 5.0 V I
C
= 1.0 A
10
---
dB
%
V
CE
= 28 V
P
out
= 50 W f = 500 MHz
7.5
8.5
55
NPN SILICON RF POWER TRANSISTOR
MRF390
DESCRIPTION:
The
ASI MRF390
is a Common
Emitter Device Designed for Class A ,
AB and C Amplifier Applications in the
100 - 500 MHz Military
Communications Band.
FEATURES INCLUDE:
Gold Metalization
Emitter Ballasting
Input Matching
MAXIMUM RATINGS
I
C
7.0 A
V
CB
60 V
P
DISS
140 W @ T
C
= 25
O
C
-55
O
C to +200
O
C
-55
O
C to +200
O
C
1.25
O
C/W
T
J
T
STG
θ
JC
PACKAGE STYLE .400 8L FLG
MINIMUM
inches / mm
.115 / 2.92
.065 / 1.65
.380 / 9.65
B
C
D
E
F
G
A
MAXIMUM
inches / mm
.125 / 3.18
.390 / 9.91
.075 / 1.91
H
.645 / 16.38
.655 / 16.64
DIM
K
L
I
J
.895 / 22.73
.420 / 10.67
.120 / 3.05
.905 / 22.99
.430 / 10.92
.130 / 3.30
O
N
M
.395 / 10.03
.159 / 4.04
.405 / 10.29
.175 / 4.45
.003 / 0.08
.007 / 0.18
.280 / 7.11
.130 / 3.30
D
K
E
.125
F
G
.1925
J
I
H
N
LM
4 x .060 R
FULL R
A
B
1
C
O
.360 / 9.14
.030 / 0.76
.735 / 18.67
.765 / 19.43
1
2
2
2
2
3
3
1 = COLLECTOR 2 = EMITTER
3 = BASE
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