参数资料
型号: MRF555T
厂商: MICROSEMI CORP
元件分类: 小信号晶体管
英文描述: UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
文件页数: 1/5页
文件大小: 171K
代理商: MRF555T
MSC1316.PDF 10-25-99
MRF555
RF & MICROWAVE DISCRETE
LOW POWER TRANSISTORS
DESCRIPTION: Designed primarily for wideband large signal stages in
the UHF frequency range.
ABSOLUTE MAXIMUM RATINGS (Tcase = 25
°°C)
Symbol
Parameter
Value
Unit
VCEO
Collector-Emitter Voltage
16
Vdc
VCBO
Collector-Base Voltage
30
Vdc
VEBO
Emitter-Base Voltage
3.0
Vdc
IC
Collector Current
500
mA
Thermal Data
P
D
Total Device Dissipation @ TC = 75C
Derate above 75C
3.0
40
Watts
mW/ C
Power Macro
Features
Specified @ 12.5 V, 470 MHz Characteristics
Output Power = 1.5 W
Minimum Gain = 11 dB
Efficiency 60% (Typ)
Cost Effective PowerMacro Package
Electroless Tin Plated Leads for Improved Solderability
140 COMMERCE DRIVE
MONTGOMERYVILLE, PA
18936-1013
PHONE: (215) 631-9840
FAX: (215) 631-9855
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