参数资料
型号: MRF555T
厂商: MICROSEMI CORP
元件分类: 小信号晶体管
英文描述: UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
文件页数: 2/5页
文件大小: 171K
代理商: MRF555T
MSC1316.PDF 10-25-99
MRF555
ELECTRICAL SPECIFICATIONS (Tcase = 25
°°C)
STATIC
Symbol
Test Conditions
Value
Min.
Typ.
Max.
Unit
BVCEO
Collector-Emitter Breakdown Voltage
(IC = 5 mAdc, IB = 0)
16
-
Vdc
BVCES
Collector-Emitter Sustaining Voltage
(IC = 5.0 mAdc, IB = 0)
30
-
Vdc
BVEBO
Emitter-Base Breakdown Voltage
(IE = 0.1 mAdc, IC = 0)
3.0
-
Vdc
ICES
Collector Cutoff Current
(VCE = 15 Vdc, VBE = 0 Vdc)
-
5
mA
HFE
DC Current Gain
(IC = 100 mA, VCE = 5.0 Vdc) Both
50
-
200
-
DYNAMIC
Symbol
Test Conditions
Value
Min.
Typ.
Max.
Unit
COB
Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)
-
---
5.5
pF
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