- 您现在的位置：买卖IC网 > PDF目录184554 > MRF581G (MICROSEMI POWER PRODUCTS GROUP) UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR PDF资料下载
参数资料
| 型号： | MRF581G |
| 厂商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分类： | 小信号晶体管 |
| 英文描述： | UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封装： | ROHS COMPLIANT, PLASTIC, M238, MACRO-X-4 |
| 文件页数： | 1/6页 |
| 文件大小： | 0K |
| 代理商： | MRF581G |
Microsemi reserves the right to change, without notice, the specifications and information contained herein
Visit our website at www.microsemi.com or contact our factory direct.
MRF581
MRF581G
MRF581A
MRF581AG
DESCRIPTION: Designed for high current, low power, low noise, amplifiers up to 1.0 GHz.
ABSOLUTE MAXIMUM RATINGS (Tcase = 25
°C)
Symbol
Parameter
MRF581
MRF581A
Unit
VCEO
Collector-Emitter Voltage
18
15
Vdc
VCBO
Collector-Base Voltage
30
Vdc
VEBO
Emitter-Base Voltage
2.5
Vdc
IC
Collector Current
200
mA
Thermal Data
P
D
Total Device Dissipation @ TC = 50C
Derate above 50C
2.5
25
Watts
mW/ C
P
D
Total Device Dissipation @ TC = 25C
Derate above 25C
1.25
10
Watts
mW/ C
Tstg
Storage Junction Temperature Range
-65 to +150
C
TJmax
Maximum Junction Temperature
150
C
Revision A- December 2008
Macro X
Features
Low Noise - 2.5 dB @ 500 MHZ
Gain at Optimum Noise Figure = 15.5 dB @ 500 MHz
Ftau - 5.0 GHz @ 10v, 75mA
Cost Effective MacroX Package
RF & MICROWAVE DISCRETE
LOW POWER TRANSISTORS
*G Denotes RoHS Compliant, Pb free Terminal Finish
相关PDF资料 |
PDF描述 |
|---|---|
| MRF581AG | UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| MRF587 | UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| MRF5S19100HSR3 | L BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| MRF5S19130HR3 | L BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| MRF6403 | L BAND, Si, NPN, RF POWER TRANSISTOR |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MRF581GT | 制造商:Microsemi Corporation 功能描述:MRF581GT - Bulk |
| MRF581LF | 功能描述:射频放大器 RF Bipolar Trans RoHS:否 制造商:Skyworks Solutions, Inc. 类型:Low Noise Amplifier 工作频率:2.3 GHz to 2.8 GHz P1dB:18.5 dBm 输出截获点:37.5 dBm 功率增益类型:32 dB 噪声系数:0.85 dB 工作电源电压:5 V 电源电流:125 mA 测试频率:2.6 GHz 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:QFN-16 封装:Reel |
| MRF581T | 制造商:Microsemi Corporation 功能描述:RF POWER TRANSISTOR BIPOLAR/HBT |
| MRF586 | 功能描述:射频双极小信号晶体管 RF Transistor RoHS:否 制造商:NXP Semiconductors 配置:Single 晶体管极性:NPN 最大工作频率:7000 MHz 集电极—发射极最大电压 VCEO:15 V 发射极 - 基极电压 VEBO:2 V 集电极连续电流:0.15 A 功率耗散:1000 mW 直流集电极/Base Gain hfe Min: 最大工作温度:+ 150 C 封装 / 箱体:SOT-223 封装:Reel |
| MRF586G | 制造商:Microsemi Corporation 功能描述:MRF586G - Bulk 制造商:Microsemi Corporation 功能描述:RF POWER TRANSISTOR BIPOLAR/HBT |
发布紧急采购，3分钟左右您将得到回复。