- 您现在的位置：买卖IC网 > Datasheet目录92 > MRF5P20180HR6 (Freescale Semiconductor)MOSFET RF N-CHAN 28V 38W NI-1230 Datasheet资料下载
参数资料
| 型号： | MRF5P20180HR6 |
| 厂商： | Freescale Semiconductor |
| 文件页数： | 5/12页 |
| 文件大小： | 397K |
| 描述： | MOSFET RF N-CHAN 28V 38W NI-1230 |
| 标准包装： | 150 |
| 晶体管类型： | LDMOS |
| 频率： | 1.93GHz |
| 增益： | 14dB |
| 电压 - 测试： | 28V |
| 额定电流： | 10µA |
| 电流 - 测试： | 1.6A |
| 功率 - 输出： | 38W |
| 电压 - 额定： | 65V |
| 封装/外壳： | NI-1230 |
| 供应商设备封装： | NI-1230 |
| 包装： | 带卷 (TR) |
2
RF Device Data
Freescale Semiconductor
MRF5P20180HR6
Table 3. ESD Protection Characteristics
Test Conditions
Class
Human Body Model
2 (Minimum)
Machine Model
M3 (Minimum)
Charge Device Model
C7 (Minimum)
Table 4. Electrical Characteristics (TC
= 25
°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Off Characteristics (1)
Zero Gate Voltage Drain Leakage Current
(VDS
= 65 Vdc, V
GS
= 0 Vdc)
IDSS
?
?
10
μAdc
Zero Gate Voltage Drain Leakage Current
(VDS
= 28 Vdc, V
GS
= 0)
IDSS
?
?
1
μAdc
Gate-Source Leakage Current
(VGS
= 5 Vdc, V
DS
= 0 Vdc)
IGSS
?
?
1
μAdc
On Characteristics
Gate Threshold Voltage
(1)
(VDS
= 10 Vdc, I
D
= 200
μAdc)
VGS(th)
2.5
2.7
3.5
Vdc
Gate Quiescent Voltage
(3)
(VDS
= 28 Vdc, I
D
= 1600 mAdc)
VGS(Q)
?
3.6
?
Vdc
Drain-Source On-Voltage
(1)
(VGS
= 10 Vdc, I
D
= 2 Adc)
VDS(on)
?
0.26
0.3
Vdc
Forward Transconductance
(1)
(VDS
= 10 Vdc, I
D
= 2 Adc)
gfs
?
5
?
S
Dynamic Characteristics
(1,2)
Reverse Transfer Capacitance
(VDS
= 28 Vdc
±
30 mV(rms)ac @ 1 MHz, V
GS
= 0 Vdc)
Crss
?
1.7
?
pF
Functional Tests
(3)
(In Freescale Test Fixture, 50 ohm system) V
DD
= 28 Vdc, I
DQ
= 1600 mA, P
out
= 38 W Avg.,
f1 = 1932.5 MHz, f2 = 1942.5 MHz and f1 = 1977.5 MHz, f2 = 1987.5 MHz, 2-Carrier W-CDMA, 3.84 MHz Channel Bandwidth Carriers.
ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset. IM3 measured in 3.84 MHz Bandwidth @ ±10 MHz Offset. PAR =
8.5 dB @ 0.01% Probability on CCDF.
Power Gain
Gps
12.5
14
?
dB
Drain Efficiency
ηD
23
26
?
%
Intermodulation Distortion
IM3
?
-37.5
-35
dBc
Adjacent Channel Power Ratio
ACPR
?
-41
-38
dBc
Input Return Loss
IRL
?
-16
-9
dB
1. Each side of device measured separately.
2. Part internally matched both on input and output.
3. Measurement made with device in push-pull configuration.
相关PDF资料 |
PDF描述 |
|---|---|
| MRF5P21045NR1 | MOSFET RF N-CH TO-270-4 |
| MRF5P21180HR6 | MOSFET RF N-CHAN 28V 38W NI-1230 |
| MRF5P21240HR6 | MOSFET RF N-CHAN 28V 52W NI-1230 |
| MRF5S19060MR1 | MOSFET RF N-CH 28V 12W TO-270-4 |
| MRF5S19060NBR1 | MOSFET N-CH 12W 28V TO-272-4 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MRF5P20180HR6_06 | 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET |
| MRF5P20180R6 | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:RF POWER FIELD EFFECT TRANSISTOR |
| MRF5P21045NR1 | 功能描述:射频MOSFET电源晶体管 HV5 2170MHZ 10W TO270WB4 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF5P21180 | 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistor |
| MRF5P21180HR5 | 功能描述:射频MOSFET电源晶体管 HV5 38W WCDMA NI1230H RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
发布紧急采购，3分钟左右您将得到回复。