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| 型号： | MRF5P21045NR1 |
| 厂商： | Freescale Semiconductor |
| 文件页数： | 1/11页 |
| 文件大小： | 417K |
| 描述： | MOSFET RF N-CH TO-270-4 |
| 标准包装： | 500 |
| 晶体管类型： | LDMOS（双） |
| 频率： | 2.11GHz |
| 增益： | 14.5dB |
| 电压 - 测试： | 28V |
| 额定电流： | 10µA |
| 电流 - 测试： | 500mA |
| 功率 - 输出： | 10W |
| 电压 - 额定： | 65V |
| 封装/外壳： | TO-270AB |
| 供应商设备封装： | TO-270 WB-4 |
| 包装： | 带卷 (TR) |
MRF5P21045NR1
1
RF Device Data
Freescale Semiconductor
RF Power Field-Effect Transistor
N-Channel Enhancement-Mode Lateral MOSFET
Designed for W-CDMA base station applications with frequencies from 2110
to 2170 MHz. Suitable for TDMA, CDMA
and multicarrier amplifier applica-
tions. Dual path topology suitable for Doherty, quadrature, single-ended and
push-pull applications.
?
Typical 2-Carrier W-CDMA Performance: VDD
= 28 Volts, I
DQ
= 500 mA,
Pout
= 10 Watts Avg., Full Frequency Band, Channel Bandwidth = 3.84 MHz,
PAR = 8.5 dB @ 0.01% Probability on CCDF.
Power Gain ? 14.5 dB
Drain Efficiency ? 25.5%
IM3 @ 10 MHz Offset ? -37 dBc in 3.84 MHz Channel Bandwidth
ACPR @ 5 MHz Offset ? -39 dBc in 3.84 MHz Channel Bandwidth
?
Capable of Handling 5:1 VSWR, @ 28 Vdc, 2140 MHz, 45 Watts CW Output
Power
Features
?
Characterized with Series Equivalent Large-Signal Impedance Parameters
?
Internally Matched for Ease of Use
?
Qualified Up to a Maximum of 32 VDD
Operation
?
Integrated ESD Protection
?
200°C Capable Plastic Package
?
RoHS Compliant
?
In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain-Source Voltage
VDSS
- 0.5, +65
Vdc
Gate-Source Voltage
VGS
- 0.5, +15
Vdc
Storage Temperature Range
Tstg
- 65 to +150
°C
Operating Junction Temperature
TJ
200
°C
Table 2. Thermal Characteristics
Characteristic
Symbol
Value (1,2)
Unit
Thermal Resistance, Junction to Case
Case Temperature 80°C, 45
W CW
Case Temperature 77°C,
10
W CW
RθJC
1.35
1.48
°C/W
1. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to access the MTTF
calculators by product.
2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
Document Number: MRF5P21045N
Rev. 0, 4/2007
Freescale Semiconductor
Technical Data
MRF5P21045NR1
2110-2170 MHz, 10 W AVG., 28 V
2 x W-CDMA, DUAL PATH
LATERAL N-CHANNEL
RF POWER MOSFET
CASE 1486-03, STYLE 1
TO-270 WB-4
(Top View)
GSA
32RFoutA/VDSA
Figure 1. Pin Connections
GSB
41RFoutB/VDSB
RFinA/V
RFinB/V
Note: Exposed backside of the package is
the source terminal for the transistors.
?
Freescale Semiconductor, Inc., 2007. All rights reserved.
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