参数资料
型号: MRF5P21045NR1
厂商: Freescale Semiconductor
文件页数: 11/11页
文件大小: 417K
描述: MOSFET RF N-CH TO-270-4
标准包装: 500
晶体管类型: LDMOS(双)
频率: 2.11GHz
增益: 14.5dB
电压 - 测试: 28V
额定电流: 10µA
电流 - 测试: 500mA
功率 - 输出: 10W
电压 - 额定: 65V
封装/外壳: TO-270AB
供应商设备封装: TO-270 WB-4
包装: 带卷 (TR)
MRF5P21045NR1
9
RF Device Data
Freescale Semiconductor
PACKAGE DIMENSIONS
CASE 1486-03
ISSUE C
TO-270 WB-4
PLASTIC
H
DATUM
PLANE
BOTTOM VIEW
A1
2X
E3
D1
E1
D3
E4
A2
PIN 5
NOTE 8
A
B
C
DRAIN LEAD
D
C
A
aaa
M
4X
b1
2X
D2
NOTES:
1. CONTROLLING DIMENSION: INCH.
2. INTERPRET DIMENSIONS AND TOLERANCES
PER ASME Y14.5M?1994.
3. DATUM PLANE ?H? IS LOCATED AT THE TOP OF
LEAD AND IS COINCIDENT WITH THE LEAD
WHERE THE LEAD EXITS THE PLASTIC BODY AT
THE TOP OF THE PARTING LINE.
4. DIMENSIONS ?D" AND ?E1" DO NOT INCLUDE
MOLD PROTRUSION. ALLOWABLE PROTRUSION
IS .006 PER SIDE. DIMENSIONS ?D" AND ?E1" DO
INCLUDE MOLD MISMATCH AND ARE DETER?
MINED AT DATUM PLANE ?H?.
5. DIMENSION ?b1" DOES NOT INCLUDE DAMBAR
PROTRUSION. ALLOWABLE DAMBAR
PROTRUSION SHALL BE .005 TOTAL IN EXCESS
OF THE ?b1" DIMENSION AT MAXIMUM MATERIAL
CONDITION.
6. DATUMS ?A? AND ?B? TO BE DETERMINED AT
DATUM PLANE ?H?.
7. DIMENSION A2 APPLIES WITHIN ZONE ?J" ONLY.
8. HATCHING REPRESENTS THE EXPOSED AREA
OF THE HEAT SLUG.
c1
F
ZONE J
E2
2X
A
DIM
A
MIN MAX MIN MAX
MILLIMETERS
.100 .104 2.54 2.64
INCHES
A1
.039 .043 0.99 1.09
A2
.040 .042 1.02 1.07
D
.712 .720 18.08 18.29
D1
.688 .692 17.48 17.58
D2
.011 .019 0.28 0.48
D3
.600 ? ? ? 15.24 ? ? ?
E
.551 .559 14 14.2
E1
.353 .357 8.97 9.07
E2
.132 .140 3.35 3.56
E3
.124 .132 3.15 3.35
E4
.270 ? ? ? 6.86 ? ? ?
F
b1
.164 .170 4.17 4.32
c1
.007 .011 0.18 0.28
e
.025 BSC
.106 BSC
0.64 BSC
2.69 BSC
1
STYLE 1:
PIN 1. DRAIN
2. DRAIN
3. GATE
4. GATE
5. SOURCE
aaa
.004 0.10
GATE LEAD
4X
e
2X
E
SEATING
PLANE
4
2
3
NOTE 7
E5
E5
E5
.346 .350 8.79 8.89
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